College of Engineering  |  Department of Electrical Engineering and Computer Science  |  ECE Division

Contact Information:
Prof. J. Kanicki
University of Michigan
EECS Department
2307 EECS Bldg.
1301 Beal Ave
Ann Arbor, MI 48109-2122

Tel: (734) 936-0964 (Office)
Tel: (734) 936-0972 (Lab)
Fax: (734) 615-2843

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2-D Numerical Simulation of the a-IGZO TFT

Tze-ching Fung and Jerzy Kanicki

Recently, there have been great interests in using amorphous In-Ga-Zn-O (a-IGZO) thin-film transistor (TFT) in active-matrix flat panel displays (AM-FPDs) or photo-imagers. To understand the device physics and the TFT operation principles, the numerical simulation is an indispensable tool. In this study, we reported on two-dimensional (2-D) simulation of electrical properties of the radio frequency (RF) sputter a-IGZO TFTs.

To accurately simulate the measured transistor electrical properties, the density-of-states model is developed. The donor-like states are also pro-posed to be associated with the oxygen vacancy (OV) in a-IGZO. Highly accurate output, transfer and sub-threshold a-IGZO TFT experimental characteristics were reproduced by our model. The experimental and cal-culated results show that the RF sputter a-IGZO TFT has a very sharp conduction band-tail slope distribution (Ea=13meV) and Ti ohmic like source / drain contacts with a specific contact resistance lower than 2.7×10-3 Ω-cm2 . The impact of OV states on TFT electrical properties were also studied. This work was supported by Canon Inc. (Japan), DARPA/MTO HARDI Program and AKT America Inc.


T.C. Fung et al., J. Appl. Phys., 106 (2009) 084511


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