College of Engineering  |  Department of Electrical Engineering and Computer Science  |  ECE Division













Contact Information:
Prof. J. Kanicki
University of Michigan
EECS Department
2307 EECS Bldg.
1301 Beal Ave
Ann Arbor, MI 48109-2122

Tel: (734) 936-0964 (Office)
Tel: (734) 936-0972
(Student office)
Tel: (734) 615-6363
(The Kanicki Lab)
Fax: (734) 615-2843
Email: Kanicki@eecs.umich.edu

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Dynamic Response of Normal and Corbino a-Si:H TFTs for AM-OLEDs

Hojin Lee, Chun-Sung Chiang, and Jerzy Kanicki

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In this project, the dynamic characteristics of normal and Corbino hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) have been investigated. Top- and bottom-gate normal a-Si:H TFTs and bottom-gate Corbino a-Si:H TFTs were fabricated with a 5-photomask process used in the processing of the active-matrix liquid crystal displays. The charging time and feed-through voltage (VP) measurement indicates that the normal a-Si:H TFT shows a similar behavior regardless of its TFT geometrical structure. Using a simple gate-to-source capacitance model, the dependence of VP on gate-to-source overlap and storage capacitor has been closely estimated using analytical calculation. Due to a unique electrode geometry, Corbino a-Si:H TFT shows a small deviation from an analytical model used for normal a-Si:H TFT, and consequently a modified analytical model was developed. We also investigated concepts of their possible application as a switching device to active-matrix organic light-emitting displays. This project is supported by RND Center of LG Philips LCD, Korea.

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