Wei D. Lu
2242 EECS Building
1301 Beal Avenue
Ann Arbor, MI 48109-2122
Phone : (734) 615-2306
Fax : (734)763-9324
University of Michigan
Dept. of Electrical Engineering & Computer Science (EECS)
Solid State Electronics Laboratory
Lu group homepage
Professor We Lu's
research interest includes high-density memory based on two-terminal
resistive devices (RRAM), memristors and memristive systems, neuromorphic circuits,
aggressively scaled nanowire transistors, and other emerging electrical devices. He
received his B.S. (1996) and Ph.D (2003) in physics from Tsinghua University, Beijing, China, and Rice University, Houston, TX respectively. From 2003 to 2005, he was a postdoctoral research fellow at Harvard
University, Cambridge, MA. He joined the faculty of the University
of Michigan in 2005 and is currently a Professor. Currently he is a co-Editor-in-Chief for
Nanoscale, a member of the
ITRS (International Technology Roadmap for Semiconductors) ERD (Emerging Research Device) working group, a member of the
IEEE, MRS, APS, and an active member of several IEEE technical committees
and program committees. He was a recipient of the NSF CAREER
Award in 2009, EECS Outstanding Achievement Award in 2012, and the 2014-15 Rexford E. Hall Innovation Excellence Award.
To date he has published over 100 journal and conference papers that have received over 12,000 citations with an h-factor of 44 ( Google Scholar ), and has attracted over
$10M external research funding. Prof. Lu is currently advising 11 Ph.D. students and 3 Postdocs.
He is also co-founder and Chief Scientist of Crossbar Inc,
a Silicon Valley semiconductor company with over $85M VC funding to date to develop next generation non-volatile memories.
Wei Lu's Google Scholar profile
Prof. Wei D. Lu's group.
My ResearcherID profile (ResearcherID: E-8388-2011)
Nanoscale (2014 Impact Factor of 7.39)
My research interests:
Nanoelectronics, memory (RRAM) and logic circuits based on
two-terminal resistive devices (memristors), neuromorphic circuits and systems, nanowires and
novel transistor devices, electrical transport in
low-dimensional systems, nanoelectromechanical systems.
a complete list, please view my Google Scholar profile
, my ResearcherID profile
visit Lu group website)
Sungho Kim , Chao Du , Patrick Sheridan , Wen Ma , ShinHyun Choi , and Wei D. Lu, "Experimental Demonstration of a Second-Order Memristor and Its Ability to Biorealistically Implement Synaptic Plasticity" Nano Letters, 15, 2203-2211 (2015). PDF
Yuchao Yang, Peng Gao, Linze Li, Xiaoqing Pan, Stefan Tappertzhofen, ShinHyun Choi, Rainer Waser, Ilia Valov, Wei D. Lu, "Electrochemical dynamics of nanoscale metallic inclusions in dielectrics" Nature Communications, 5, 4232 (2014).
Yuchao Yang, Jihang Lee, Seunghyun Lee, Che-Hung Liu, Zhaohui Zhong, and Wei Lu, "Oxide Resistive Memory with Functionalized Graphene as Built-in Selector Element" Advanced Materials, 26, 3693-3699 (2014).
Sungho Kim, Shinhyun Choi, Wei Lu, "Comprehensive Physical Model of Dynamic Resistive Switching in an Oxide Memristor" ACS Nano, 8, 2369-2376 (2014).
Y. Yang, S.H. Choi, W. Lu "Oxide Heterostructure Resistive Memory" Nano Lett. 13, 2908-2915 (2013).
Wei Lu "Memristors: Going active" Nature materials 12, 93-94 (2013).
Yuchao Yang, Peng Gao, Siddharth Gaba, Ting Chang, Xiaoqing Pan, and Wei Lu "Observation of conducting filament growth in nanoscale resistive memories"
Nature Communications, 3, 732(2012). doi:10.1038/ncomms1737
K.-H. Kim, S. Gaba, D. Wheeler, J. M. Cruz-Albrecht, T. Hussain, N. Srinivasa, and W. Lu, "A Functional Hybrid Memristor Crossbar-Array/CMOS System for Data Storage and Neuromorphic Applications"
Nano Lett., 12, 389-395 (2012). PDF
Ting Chang, Sung-Hyun Jo, and Wei Lu, "Short-Term Memory to Long-Term Memory Transition in a Nanoscale Memristor" ACS Nano,
9, 7669-7676 (2011).
Sung Hyun Jo, Ting Chang, Idongesit Ebong, Bhavi
Bhavitavya, Pinaki Mazumder and Wei Lu,
"Nanoscale Memristor Device as Synapse in
Nano Lett., 10, 1297-1301
PDF Featured in Nature, EE Times, New Scientist, PhysicsOrg, Chemistry World and other news outlets.
Sung Hyun Jo, Kuk-Hwan Kim and Wei Lu,
"High-Density Crossbar Arrays Based on a Si
Memristive System", Nano Lett.,
9, 870-874 (2009).
PDF Highlighted in Nature Materials.
Sung Hyun Jo and Wei Lu, "CMOS Compatible Nanoscale
Nonvolatile Resistance Switching Memory",
Nano Lett., 8, 392-397 (2008).
Eric N. Dattoli,
Qing Wan, Wei Guo, Yanbin Chen, Xiaoqing Pan, and Wei Lu, "Fully
Transparent Thin-Film Transistor Devices Based on SnO2
Nanowires" Nano Lett., 7, 2463-2469
Lu, and C. M. Lieber, "Nanoelectronics from the
Nature Mater., 6, 841-850 (2007).
Xiang, Wei Lu, Yongjie Hu, Yue Wu, Hao Yan and Charles
M. Lieber, "High performance field effect transistors
based on Ge/Si nanowire heterostructures", Nature,
441, 489-493 (2006).
Lu, Jie Xiang, Brian P. Timko, Yue Wu and Charles M.
Lieber, "One-dimensional hole gas in germanium/silicon
nanowire heterostructures", Proc. Natl. Acad. Sci.
102, 10046-10051 (2005).
Jie Xiang, Chen Yang, Wei Lu and Charles M. Lieber,
"Single-crystal metallic nanowires and metal/semiconductor
nanowire heterostructures", Nature. 430,
Zhongqing Ji, Loren Pfeiffer, K. W. West and A. J. Rimberg,
"Real-time Detection of Electron Tunneling in a Quantum
423, 422-425 (2003).
W. Lu, A.
J. Rimberg, K. D. Maranowski and A. C. Gossard,
"Single-electron transistor strongly coupled to an
electrostatically defined quantum dot", Appl. Phys. Lett.
77, 2746-2478 (2000).