|
Wei D. Lu > Dept. of Electrical Engineering & Computer Science (EECS) |
Biography Professor We Lu's research interest includes high-density memory based on two-terminal resistive devices (RRAM), memristors and memristive systems, neuromorphic circuits, aggressively scaled nanowire transistors, and other emerging electrical devices. He received his B.S. (1996) and Ph.D (2003) in physics from Tsinghua University, Beijing, China, and Rice University, Houston, TX respectively. From 2003 to 2005, he was a postdoctoral research fellow at Harvard University, Cambridge, MA. He joined the faculty of the University of Michigan in 2005 and is currently a Professor. Currently he serves as the Director of the Lurie Nanofabrication Facility, Associate Editor for Nanoscale, member of the ITRS (International Technology Roadmap for Semiconductors) ERD (Emerging Research Device) working group, and is a member of the IEEE, MRS, APS, and an active member of several IEEE technical committees and program committees. He was a recipient of the NSF CAREER Award in 2009, EECS Outstanding Achievement Award in 2012, and the 2014-15 Rexford E. Hall Innovation Excellence Award. To date he has published over 100 journal papers that have received over 15,000 citations with an h-factor of 50 ( Google Scholar ). Prof. Lu is currently advising 11 Ph.D. students and 3 Postdocs, and has graduated 12 Ph.Ds. and advised 8 Postdocs. He is also co-founder and Chief Scientist of Crossbar Inc, a Silicon Valley semiconductor company with over $85M VC funding to date to develop next generation non-volatile memories.Wei Lu's Google Scholar profile Visit Prof. Wei D. Lu's group.
More information about me. My ResearcherID profile (ResearcherID: E-8388-2011) Visit Nanoscale (2014 Impact Factor of 7.39) Nanoelectronics, memory (RRAM) and logic circuits based on two-terminal resistive devices (memristors), neuromorphic circuits and systems, nanowires and novel transistor devices, electrical transport in low-dimensional systems, nanoelectromechanical systems. Selected Publications (for a complete list, please view my Google Scholar profile , my ResearcherID profile or visit Lu group website)Sungho Kim , Chao Du , Patrick Sheridan , Wen Ma , ShinHyun Choi , and Wei D. Lu, "Experimental Demonstration of a Second-Order Memristor and Its Ability to Biorealistically Implement Synaptic Plasticity" Nano Letters, 15, 2203-2211 (2015). PDF Yuchao Yang, Peng Gao, Linze Li, Xiaoqing Pan, Stefan Tappertzhofen, ShinHyun Choi, Rainer Waser, Ilia Valov, Wei D. Lu, "Electrochemical dynamics of nanoscale metallic inclusions in dielectrics" Nature Communications, 5, 4232 (2014). Yuchao Yang, Jihang Lee, Seunghyun Lee, Che-Hung Liu, Zhaohui Zhong, and Wei Lu, "Oxide Resistive Memory with Functionalized Graphene as Built-in Selector Element" Advanced Materials, 26, 3693-3699 (2014). Sungho Kim, Shinhyun Choi, Wei Lu, "Comprehensive Physical Model of Dynamic Resistive Switching in an Oxide Memristor" ACS Nano, 8, 2369-2376 (2014). Y. Yang, S.H. Choi, W. Lu "Oxide Heterostructure Resistive Memory" Nano Lett. 13, 2908-2915 (2013). Wei Lu "Memristors: Going active" Nature materials 12, 93-94 (2013). Yuchao Yang, Peng Gao, Siddharth Gaba, Ting Chang, Xiaoqing Pan, and Wei Lu "Observation of conducting filament growth in nanoscale resistive memories" Nature Communications, 3, 732(2012). doi:10.1038/ncomms1737 K.-H. Kim, S. Gaba, D. Wheeler, J. M. Cruz-Albrecht, T. Hussain, N. Srinivasa, and W. Lu, "A Functional Hybrid Memristor Crossbar-Array/CMOS System for Data Storage and Neuromorphic Applications" Nano Lett., 12, 389-395 (2012). PDF Ting Chang, Sung-Hyun Jo, and Wei Lu, "Short-Term Memory to Long-Term Memory Transition in a Nanoscale Memristor" ACS Nano, 9, 7669-7676 (2011). PDF Sung Hyun Jo, Ting Chang, Idongesit Ebong, Bhavi Bhavitavya, Pinaki Mazumder and Wei Lu, "Nanoscale Memristor Device as Synapse in Neuromorphic Systems," Nano Lett., 10, 1297-1301 (2010). PDF Featured in Nature, EE Times, New Scientist, PhysicsOrg, Chemistry World and other news outlets.
Sung Hyun Jo, Kuk-Hwan Kim and Wei Lu,
"High-Density Crossbar Arrays Based on a Si
Memristive System", Nano Lett.,
9, 870-874 (2009).
PDF Highlighted in Nature Materials.
Sung Hyun Jo and Wei Lu, "CMOS Compatible Nanoscale
Nonvolatile Resistance Switching Memory",
Nano Lett., 8, 392-397 (2008).
PDF Eric N. Dattoli,
Qing Wan, Wei Guo, Yanbin Chen, Xiaoqing Pan, and Wei Lu, "Fully
Transparent Thin-Film Transistor Devices Based on SnO2
Nanowires" Nano Lett., 7, 2463-2469
(2007).
PDF Wei
Lu, and C. M. Lieber, "Nanoelectronics from the
Bottom-up",
Nature Mater., 6, 841-850 (2007).
PDF Jie
Xiang, Wei Lu, Yongjie Hu, Yue Wu, Hao Yan and Charles
M. Lieber, "High performance field effect transistors
based on Ge/Si nanowire heterostructures", Nature,
441, 489-493 (2006).
PDF Wei
Lu, Jie Xiang, Brian P. Timko, Yue Wu and Charles M.
Lieber, "One-dimensional hole gas in germanium/silicon
nanowire heterostructures", Proc. Natl. Acad. Sci.
USA,
102, 10046-10051 (2005).
PDF
Yue Wu,
Jie Xiang, Chen Yang, Wei Lu and Charles M. Lieber,
"Single-crystal metallic nanowires and metal/semiconductor
nanowire heterostructures", Nature. 430,
61-65 (2004).
PDF
Wei Lu,
Zhongqing Ji, Loren Pfeiffer, K. W. West and A. J. Rimberg,
"Real-time Detection of Electron Tunneling in a Quantum
Dot", Nature.
423, 422-425 (2003).
PDF
W. Lu, A.
J. Rimberg, K. D. Maranowski and A. C. Gossard,
"Single-electron transistor strongly coupled to an
electrostatically defined quantum dot", Appl. Phys. Lett.
77, 2746-2478 (2000).
PDF |
