Lab

Our Laboratories

Our lab has access to state-of-the-art semiconductor growth, processing and characterization facilities. In particular, we have two dedicated laboratories for epitaxial growth and materials and device characterizations.

Epitaxial Growth

Metal-organic chemical vapor deposition: Thomas Swan closed-coupled showerhead (CCS) 3x2 system for the epitaxy of GaN, AlN, InN, and alloys; reserved gas lines for arsine and phosphine.

Materials and Device Characterizations

Photoluminescence (time-resolved with minimum lifetime of 50ps and temperature-dependent 4-500K)
Electroluminescence (light-current, output spectrum, and current-voltage)
Integrating sphere (12-inch diamater)
Transmission and absorption measurements (detector range 0.2 - 1.7micron)
Pump-probe measurements (titanium sapphire laser with frequency doubler and tripler)

Device Design and Simulations

We perform simulations using MEEP, COMSOL, and Synopsys Sentaurus (licensed through CAEN). We have two dedicated workstations (Intel core 2 quad and dual-Xenon quad-core) in our laboratories for these simulations. In addition, the Center for Advanced Computing at the University of Michigan provides high performance scientific computing capabilities.

In addition, we have access to various user facilities at the University of Michigan including Lurie Nanofabrication Facility (LNF), Electron Microbeam Analysis Laboratory (EMAL), Michigan Ion Beam Laboratory (MIBL), and Hanawat X-Ray MicroAnalysis Laboratory (XMAL). These facilities provide us with the capabilities of nanometer resolution lithography and microscopy, thin-film and metal deposition, etching, and packaging. A list of equipment can be found here, here, and here.