IEEE, AVS, and ECS Fellow
Department of Electrical Engineering and Computer
Science
2304 EECS Building
1301 Beal Avenue
Ann Arbor, MI 48109-2122
Telephone: 734-936-2962
Fax: 734-763-9324
Email: pang@umich.edu
Education
Ph.D., Department of Electrical
Engineering and Computer Science (Electronic Materials and Devices), Princeton
University, Princeton, NJ 08544.
(1981).
MSc., Electrical Engineering and Computer Science, Princeton
University, Princeton, NJ 08544. (1978).
ScB., Electrical and Computer Engineering, Brown University,
Providence, RI. (1977).
Nanofabrication Technology, Nanoimprint,
Dry Etching, Dry Deposition, Biomedical, Microelectronic, Optical, and Microelectromechanical Devices
Research areas include nanofabrication technology, nanoimprint, fluidic systems for DNA analysis,
nanostructures for cell growth, MEMS based chemical sensors, plasma etching and
deposition technology, process induced damage, micromachining technology and
devices, field emission devices, and quantum effect devices. High-resolution
patterning and plasma processing are used to generate devices and systems with
features below 100 nm. Reversal nanoimprint has been
developed to generate patterns on flexible substrates, three dimensional
nanostructures, and sealed multiple levels fluidic systems.¡¡ Plasma process induced defects are
identified and techniques to minimize, remove, and passivate
damage have been developed. Novel techniques in micromachining are developed to
create high sensitivity and high frequency resonators and sensors with merged
circuits. Optical switching arrays in Si are formed using vertical Si micromirrors and high aspect ratio resonators. Uniform
arrays of gated Si field emission devices are fabricated with sharp emitters
and close gate-tip spacing. These high efficiency field emitters have low
threshold voltage and high emission current, especially after plasma passivation or HfC coating.
Controllable and low damage dry etching technology is applied to single
electron transistors, in-plane gated quantum wire transistors, heterojunction bipolar transistors, optical waveguides and
mirrors with high performance.
- Develop reversal nanoimprint to pattern nanostructures over topography
and to create 3D devices and systems.
- Develop microfluidic
systems to immobilize, move, and stretch DNA molecules in sealed channels.
- Demonstrate control of cell
growth on patterned nanostructures.
- Develop and characterize
multiple stage preconcentrators with high
sensitivity.
- Identify process induced
defects and relate changes in electrical characteristics to optical
responses. Develop novel techniques to minimize or passivate
damage to provide substantial performance improvements. Model and control
defect generation and distribution in Si and III-V devices.
- Develop and characterize
quantum effect devices including single electron transistors, in-plane
gated quantum wire transistors and quantum wires/dots for lasers and
waveguides. Patterning and etching technologies are developed to fabricate
high quality devices down to 20 nm.
- Develop direct nano-printing technology in metal and polymer using SiC molds for high resolution and high throughput
patterning. This is the first demonstration that nanostructures down to 20
nm can be printed in metal repeatedly using a SiC
mold.
- Develop novel micromachining
technology to fabricate thick resonators with higher sensitivity. With
this new technology, device thickness is no longer limited and the process
is simplified significantly since bonding to glass is not needed and it
requires only 1 mask level.
- Implementation of merged MEMS
devices with on-chip circuits using thick (>10 µm) single crystal
Si microstructures without bonding to glass or another wafer. Without
bonding, the process is simplified significantly. The thick single crystal
Si also provides higher sensitivity and higher quality factor.
- Demonstration of vertical
mirrors and lenses in Si that can be controlled by integrated
electrostatic drivers. Optical switching arrays with Si vertical mirrors
were fabricated with large modulations of the optical signals at low
power.
- Develop new technology for
self-aligned field emitter arrays with sharp emitters and close gate-tip spacings. Emitters with radius of 8 nm and density
>107 tips/cm2 have been demonstrated. Low turn-on voltage
(16 V), high emission current (6 µA/tip), and good stability
(¡À0.25%) were obtained which are substantially better than previously
reported results.
- Develop low damage emitter etch and precise end point techniques for self-aligned HBTs. Emitter etching is stopped within 5 nm with low damage and high device performance.
Last Updated: September 9, 2008
E-Mail: pang@umich.edu