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Gallium Nitride Resonators and Resonant Body Transistors

Azadeh Ansari, Vikrant Gokhale

Sponsors: NSF NSF and ONR ONR

An interesting direction for GaN research, which is largely unexplored, is GaN-based micromechanical devices or GaN MEMS. To fully unlock the potential of GaN and realize an all-GaN MMIC, it is essential to co-integrate passive devices (such as resonators and filters), sensors (such as temperature and gas sensors), and other more-than-Moore functional devices with GaN ICs. Therefore, there is a growing interest in use of GaN as a mechanical material. To this end, our group develops high-performance GaN-based microelectromechanical components, including GaN resonators and AlGaN/GaN resonant body high electron mobility transistors (Resonant Body HEMTs).

A. Ansari and M. Rais-Zadeh, “An 8.7 GHz GaN micromechanical resonator with an integrated AlGaN/GaN HEMT,” Solid-State Sensors, Actuators and Microsystems Workshop, accepted, Hilton Head, SC, June 2014.

A. Ansari and M. Rais-Zadeh, "A thickness-mode AlGaN/GaN resonant body high electron mobility transistor," IEEE Transaction on Electron Devices, in press, Feb, 2014.

M. Raieszadeh and A. Ansari, "Resonant body high electron mobility transistors," Invention disclosure, filed, 2013.

A. Ansari and M. Rais-Zadeh, "HEMT-Based readout of a thickness-mode AlGaN/GaN resonator," IEEE Electron Device Meeting (IEDM’13), Washington, DC, pp. 1-4, 2013.

A. Ansari, V. Gokhale, J. Roberts, and M. Rais-Zadeh, "Monolithic integration of GaN-based micromechanical resonators and HEMTs for timing application," IEEE International Electron Device Meeting (IEDM’12), San Francisco, CA, December, 2012.

A. Ansari, V. J. Gokhale, V. A. Thakar, J. Roberts, and M. Rais-Zadeh, "Gallium nitride-on-silicon micromechanical overtone resonators and filters," IEEE Electron Device Meeting (IEDM'11), pp. 485-488, Washington, DC, 2011.

V. J. Gokhale, J. Roberts, and M. Rais-Zadeh, "High-performance bulk-mode gallium nitride resonators and filters," International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers'11), pp. 926-929, Beijing, China, 2011.

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