Office:
The
Department of Electrical Engineering
and Computer Science
2308 EECS Building
1301 Beal Avenue
734-763-9764 (office) 734-763-9324 (fax)
fredty@eecs.umich.edu
Techniques (especially nondestructive) for characterization of electronic materials and nanostructures; in situ process monitoring; control of semiconductor processes; physics of solid state devices; insulated gate transistor physics and technology; properties of electronic materials and their effects on devices; reliability of semiconductor devices, particularly in hostile environments.
Optical measurement of nanoscale features, characterization and control of micro- and nano-fabrication processes (particularly plasma processes), high-speed thin film measurements, models for the optical dielectric response of materials, spectroscopic ellipsometry for characterization of electronic materials.
Massachusetts Institute of
Technology,
Ph.D. degree, June, 1985,
Department of Electrical Engineering and Computer Science. Thesis under
Professor S. D. Senturia on "Electron Traps and
M.S. and B.S. degrees in Electrical Engineering, June, 1981. Thesis entitled "A New Silicon Oxynitride Process for MIS Devices." Curriculum concerned classical and quantum physics, circuit design, linear systems analysis, computer programming and elementary computer architecture, applied and abstract mathematics.
University of Michigan, Department of Electrical Engineering and Computer Science, Associate Professor, September 1, 1991-August, 2007.
Cornell University of Michigan, Department of Electrical and Computer Engineering, Visiting Associate Professor, September, 2001-May, 2002 (sabbatical leave)
University of Michigan, Department of Electrical Engineering and Computer Science, Assistant Professor, September 1, 1985-August, 1991.
Massachusetts Institute of
Technology,
June, 1981 to June, 1985
Research Assistant. Engaged in research on the electronic properties of ammonia-annealed (nitrided) silicon dioxide for insulated gate field effect transistors, including bulk electron traps, and the response to ionizing radiation. Radiation-hardened gate dielectric technology transfered to Sandia National Laboratiories. Held Secret security (DISCO) clearance from Summer, 1978 to August, 1985.
September, 1980 to January, 1981
Teaching Assistant for laboratory course teaching basic techniques in silicon device fabrication.
June, 1978 to August, 1980
Co-op student. Research included initial investigation of nitrided oxide, laser recrystallization of polycrystalline silicon on silicon dioxide, and laser annealing of ion implantation damage on single crystal silicon.
1. Chenan Xia, Zhao Xu, M.N. Islam, F.L. Terry, Jr., M.J. Freeman, A. Zakel, J. Mauricio, "10.5 W Time-averaged power Mid-IR supercontinuum generation extending beyond 4 mm with direct pulse pattern modulation," IEEE Journal of Selected Topics in Quantum Electronics, v 15, n 2, p 422-34, March-April 2009.
2. Islam, M.N., Chenan Xia, M.J. Freeman, J. Mauricio, A. Zakel, K. Ke, Z. Xu, F.L. Terry, Jr. "Mid-IR super-continuum generation," Proceedings of the SPIE - The International Society for Optical Engineering, v 7195, p 71950W (12 pp.), 2009
3. Elson Liu and Fred L. Terry, Jr., "Immersion Scatterometry for Improved Nano-Scale Topography Measurements," Physica Status Solidi (a), Vol. 205, No. 4, 784–788 (2008)
4. Pete I. Klimecky and Fred L. Terry, Jr., "A multi-sensor study of Cl2 etching of polycrystalline Si," Phys. Stat. Sol. (c) 5, No. 5, 1341–1345 (2008)
5. Chenan Xia; M. Kumar,Ming-Yuan Cheng; O.P. Kulkarni, M.N Islam, A Galvanauskas, F.L. Terry, M.J Freeman, D.A .Nolan, W.A. Wood, "Supercontinuum Generation in Silica Fibers by Amplified Nanosecond Laser Diode Pulses," IEEE Journal of Quantum Electronics, Volume 13, Issue 3, May-June 2007 Page(s):789 - 797
6.
Hsu-Ting Huang, Fred L. Terry, Jr., "Spectroscopic ellipsometry
and reflectometry from gratings (Scatterometry)
for critical dimension measurement and in situ, real-time process monitoring," Thin Solid Films, 455-456,
pp. 828-836 (2004). Refereed journal article from talk at the Third
International Conference on Spectroscopic Ellipsometry
(ICSE-3),
7.
Suhong Kim, Pete Klimecky, Jay B. Jeffries, Fred L. Terry, Jr., and
8. Pete I. Klimecky, J. W. Grizzle, and Fred L. Terry, Jr. "Compensation for transient chamber wall condition using real-time plasma density feedback control in an inductively coupled plasma etcher," J. Vac. Sci. Technol., A 21, pp. 706-17 (2003).
9.
10. Pete Klimecky, Craig Garvin, Cecilia G. Galarza, Brooke S. Stutzman, Pramod P. Khargonekar, and Fred L. Terry Jr., "Real-Time RIE Metrology Techniques to Enable In Situ Response Surface Process Characterization," J. Electrochem. Soc., 148, pp. 34-40 (2001).
11. Tong-Li,
12. B. S. Stutzman, H.-T. Huang, and F. L. Terry, Jr., "Two-channel spectroscopic reflectometry for in situ monitoring of blanket and patterned structures during reactive ion etching," J. Vac. Sci. Techn., B18, pp.2785-93 (2000).
13. C. K. Hanish, J. W. Grizzle, and F. L. Terry, Jr., "Estimating and Controlling Atomic Chlorine Concentration via Actinometry," IEEE Trans. Semicond. Manuf., 12, pp. 323-331 (1999).
14. L. I. Kamlet and F. L. Terry, Jr., "Dielectric Function Modeling
for In1-yAlyAs on InP," Thin Solid Films, 313-4, pp. 435-441 (1998). Refereed journal article from poster
presentation at the Second International Conference on Spectroscopic Ellipsometry (ICSE-2),
15. T. E.
Benson, A. Ramamoorthy, L. I. Kamlet,
and F. L. Terry, Jr., "High-Speed, High-Accuracy Optical Measurements of
Polycrystalline Silicon for Process Control," Thin Solid Films, 313-4,
pp. 177-182 (1998). Refereed journal article from oral presentation at the
Second International Conference on Spectroscopic Ellipsometry
(ICSE-2),
16.
C.K. Hanish, J. W. Grizzle, H.H. Chen, L.I.
Kamlet, S. Thomas, III, F. L. Terry, Jr., and S. W. Pang, "Modeling and
Algorithm Development for Automated Optical Endpointing
of an HBT Emitter Etch," J. Electron. Mat., 26, pp. 1401-8 (1997).
17.
L. I. Kamlet;
F. L. Terry, Jr; and G. N. Maracas, "A temperature-dependent model for the
complex dielectric function of GaAs," J. Electron. Mat., 26, pp. 1409-16 (1997).
18. T. L. Vincent, P. P. Khargonekar, and F. L. Terry, Jr., "End Point and Etch Rate Determination using Dual Wavelength Laser Reflectometry with a Nonlinear Estimator," J. Electrochem. Soc., 144, pp. 2467-72 (1997).
19. T. L. Vincent, P. P. Khargonekar, and F. L. Terry, Jr., "An Extended Kalman Filtering-Based Method of Processing Reflectometry Data for Fast In-Situ Etch Rate Measurements," T. L. Vincent, P. P. Khargonekar, and F. L. Terry, Jr., IEEE Trans. Semicond. Manuf., 10, pp. 42-51 (1997).
20. T. E. Benson, L. I. Kamlet, P. Klimecky, and F. L. Terry, Jr., "In-situ Spectroscopic Reflectometry for Polycrystalline Silicon Thin Film Etch Rate Determination During Reactive Ion Etching," J. Elec. Mat., 25, pp. 955-64 (1996).
21. T. E. Benson, L. I. Kamlet, S.M. Ruegsegger, C. K. Hanish, P. D. Hanish, B. A. Rashap, P. Klimecky, J. S. Freudenber, J. W. Grizzle, P. P. Khargonekar, and F. L. Terry, Jr., "Sensor systems for real-time feedback control of reactive ion etching," J. Vac. Sci. Tech., B 14, pp. 483-8 (1996).
22. P. D. Hanish, J. W. Grizzle, M. D. Giles, and F. L. Terry, Jr., "A model-based technique for real-time estimation of absolute fluorine concentration in a CF4/Ar plasma," J. Vac. Sci. Tech., A 13, pp. 1802-7 (1995).
23. L. I. Kamlet, and F. L. Terry, Jr., "A composition-dependent model for the complex dielectric function of In1-xGaxAsyP1-y/ lattice- matched to InP", J. Elec. Mat., 24, pp. 2005-13 (1995).
24. B. A. Rashap, M. E. Elta, H. Etemad, J. P. Fournier, J. S. Freduenberg, M. D. Giles, J. W. Grizzle, P. T. Kabamba, P. P. Khargonekar, S. Lafortune, J. R. Moyne, D. Teneketzis, and F. L. Terry, Jr., "Control of Semiconductor Manufacturing Equipment," IEEE Transactions on Semiconductor Manufacturing, 8, pp. 286-297 (1995).
25. D. S. MacGregor, R. A. Rojeski, G. F. Knoll, F. L. Terry, Jr., J. East, and, Y. Eisen, "Present Status of Undoped Semi-Insulating LEC Bulk GaAs as a Radiation Spectrometer," Nucl. Instrum. and Methods in Phys. Res., A 343, pp. 527-38 (1994).
26. D. S. MacGregor, R. A. Rojeski, G. F. Knoll, F. L. Terry, Jr., J. East, and, Y. Eisen, "Evidence for field enhanced capture by EL2 centers in semi-insulating GaAs and the effect on GaAs radiation detectors," J. Appl. Phys., 75, pp. 7910-15 (1994).
27. J. S. Herman and F. L. Terry, Jr., "Hydrogen Sulfide Plasma Passivation of Indium Phosphide," J. Elec. Mat., 22, p. 119-24 (1993).
28. J. S. Herman and F. L. Terry, Jr., "Plasma Passivation of GaAs," J. Vac. Sci. Techn., A11, pp. 1094-8 (1993).
29. J. L. Dupuie,
30. M. E. Sherwin, G. O. Munns, D. T. Nichols, Bhattacharya, P. K. , Terry, F. L. Jr., "Growth of InGaAsP by CBE for SCH quantum well lasers operating at 1.55 and 1.4 µm," Journal of Crystal Growth, 120, pp. 162-166 (1992).
31. M. E. Sherwin, F. L. Terry, Jr., G. O. Munns, J. S. Herman, E. G. Woelk, and G. I. Haddad, "Investigation and Optimization of InGaAs/InP Heterointerfaces Grown by Chemical Beam Epitaxy Using Spectroscopic Ellipsometry and Photoluminescence," J. Elect. Mat., 21, pp. 269-275 (1992).
32. M. E.
Sherwin, G. O. Munns, E. G. Woelk,
T.J. Drummond, M. E. Elta, F. L. Terry, Jr., and G. I. Haddad, "The Design of
an ECR Plasma System and Its Application to InP Grown
by CBE," Journ.
33. M. E.
Sherwin, G. O. Munns,
M. E. Elta, E. G. Woelk, S. B. Crary, F. L. Terry, Jr., and G. I. Haddad, "Optimization of
InxGa1-xAs and InP Grown by
CBE," Journ.
34. J. L. Lee and F. L. Terry, Jr., "Reactive Ion Etching of Tungsten Silicide Using NF3 Gas Mixtures," J. Vac.Sci. Technol., B9, pp. 2747-2751 (1991).
35. F. L. Terry, Jr., "A Modified Harmonic Oscillator Approximation Scheme for the Dielectric Constants of AlxGa1-xAs," J. Appl. Phys., 70, pp. 409-417 (1991).
36. H. W. Trombley, F. L. Terry, Jr., and M. E. Elta, "A Self-Consistent Particle Model for the Simulation of RF Glow Discharges," IEEE Trans. Plasm. Sci., 19, pp. 158-162 (1991).
37. J. Mo, A. L. Robinson, D. Fitting, P. Carson, and F. L. Terry, Jr., "Improvement of Integrated Ultrasonic Transducer Sensitivity," Sensors and Actuators , A22, pp. 679-682 (1990).
38. J. Mo, A. L. Robinson, D. Fitting, P. Carson, and F. L. Terry, Jr., "Micromachining for Improvement of Integrated Ultrasonic Transducer Sensitivity," IEEE Trans. Elec. Dev., 37, pp. 134-140 (1990).
39. W. T. Shiau and F. L. Terry, Jr., "Bias-Temperature Stability of Nitrided Oxides and Reoxidized Nitrided Oxides," Journ. Elec. Mat., 18, pp. 767-73 (1989).
40. M. A. Schmidt, F. L. Terry, Jr., B. P. Mathur and S. D. Senturia, "Inversion Layer Mobility of MOSFETs with Nitrided Oxide Gate Dielectrics," IEEE Trans. Elec. Dev. , 35, pp. 1627-32 (1988).
41. M. A. Schmidt, J. I. Raffel, F. L. Terry, Jr., and S. D. Senturia, "A Metal Gate Self-Aligned MOSFET Using Nitrided Oxide," IEEE Trans. Elec. Dev., 32, pp. 643-8 (1985).
42. F. L. Terry, Jr., P .W. Wyatt, M. L. Naiman, B. P. Mathur, C. T. Kirk, and S. D. Senturia, "High-Field Electron Capture and Emission in Nitrided Oxides," Journ. Appl. Phys., 57, pp. 2036-9 (1985).
43. M. L. Naiman, C. T. Kirk, R. J. Aucoin, F. L. Terry, Jr., P. W. Wyatt, and S. D. Senturia, "Effect of Nitridation of Silicon Dioxide on Its Infrared Spectrum," Journ. Electrochem. Soc., 131, p. 637-640 (1984).
44. F. L. Terry, Jr., M. L. Naiman, R. J. Aucoin, and S. D. Senturia, "Megarad-Resistant 10nm Gate Dielectrics," IEEE Trans. Nucl. Sci., 28, pp. 4389-4391 (1981).
1. Y.B. Guo, C. Divin, A. Myc, F.L. Terry, J.R. Baker, T.B. Norris, J.Y. Ye, "Sensitive molecular binding assay using a photonic crystal structure in total internal reflection," Opt. Express, pp 11741-11749 (2008)
2. M. Kumar, C. Xia, X. Ma, V. V. Alexander, M. N. Islam, F. L. Terry, C. C. Aleksoff, A. Klooster, and D. Davidson, "Power adjustable visible supercontinuum generation using amplified nanosecond gains-witched laser diode," Opt. Express 16, 6194-6201 (2008).
3. C. Xia, M. Kumar, M. -Y. Cheng, R. S. Hegde, M. N. Islam, A. Galvanauskas, H. G. Winful, F. L. Terry, Jr., M. J. Freeman, M. Poulain, and G. Mazé, "Power scalable mid-infrared supercontinuum generation in ZBLAN fluoride fibers with up to 1.3 watts time-averaged power," Opt. Express 15, 865-871 (2007)
4. O. P. Kulkarni, C. Xia, D. J. Lee, M. Kumar, A. Kuditcher, M. N. Islam, F. L. Terry, M. J. Freeman, B. G. Aitken, S. C. Currie, J. E. McCarthy, M. L. Powley, and D. A. Nolan, "Third order cascaded Raman wavelength shifting in chalcogenide fibers and determination of Raman gain coefficient," Opt. Express 14, 7924-7930 (2006)
5. S. Govindaswamy, J. East, F. Terry, E. Topsakal, J. L. Volakis, G.I. Haddad, "Frequency-selective surface based bandpass filters in the near-infrared region," Microwave and Optical Technology Letters, vol. 41, no. 4, 20 May 2004, p 266-9
6. S. Govindaswamy, J. East, F. Terry, E. Topsakal, J.L. Volakis, G.I. Haddad, "Dual-frequency-selective surfaces for near-infrared bandpass filters," Microwave and Optical Technology Letters, vol. 43, no. 2, 20 Oct. 2004, p 95-8
7. "Normal Incidence Spectroscopic Ellipsometry for Critical Dimension Monitoring," Hsu-Ting Huang, Wei Kong, and Fred Lewis Terry, Jr., Applied Physics Letters, 78, 3983-3985 (2001).
8. J. S. Herman and F. L. Terry, Jr., "Hydrogen Sulfide Plasma Passivation of Gallium Arsenide," Appl. Phys. Lett., 60, pp. 716-717 (1992).
9. J. S. Herman and F. L. Terry, Jr., "A Two-Temperature Technique for PECVD SiO2," IEEE Elec. Dev. Lett., IEEE Elec. Dev. Lett., 12, 236-7 (1991).
10. F. L. Terry, Jr., R. J. Aucoin, M. L. Naiman, P .W. Wyatt, and S. D. Senturia, "Radiation Effects in Nitrided Oxides," IEEE Elec. Dev. Lett., 4, p. 191-3 (1983).
1. Zhao Xu, Chenan Xia, M.N. Islam, F.L. Terry, Jr., M.J. Freeman, A. Zakel, J. Mauricio, "10.5 Watts time-averaged power mid-IR supercontinuum generation with direct pulse pattern modulation," 2009 Conference on Lasers and Electro-Optics (CLEO).
2. O.P. Kulkarni, M. Kumar, M.N. Islam, F.L. Terry, Jr., "Colorless, surface normal optical modulator based on free carrier effect in gallium arsenide Source," 2009 Conference on Lasers and Electro-Optics (CLEO).
3. M. Kumar, C.N. Xia, X.Q. Ma, V.V. Alexander, M.N. Islam, F.L. Terry, C.C. Aleksoff, A. Klooster, D. Davidson, "Power Scalable Visible Supercontinuum Generation Using Amplified Nanosecond Gain-Switched Laser Diode," Conference on Lasers and Electro-Optics, 4-9 May 2008 , San Jose, CA, , pp. 2573-4
4. C.
Xia, M. Kumar, M.N. Islam, A. Galvanauskas, F.L.Terry, Jr., M.J.
Freeman, "All-fiber-integrated mid-infrared supercontinuum
system with 0.7 watts time-averaged power," Conference on Lasers and
Electro-Optics, 5-11 May 2007 ,
5. Fred Lewis Terry, Jr. and Joseph J. Bendick, "Immersion Scatterometry for Improved Feature Resolution and High Speed Acquisition of Resist Profiles," Proc. SPIE Vol. 5752, Metrology, Inspection, and Process Control for Microlithography XIX, p. 237-247 (May, 2005).
6. Fred L. Terry, Jr., "Accuracy limitations in specular-mode optical topography extraction," Proc. SPIE Vol. 5038, p. 547-558, Metrology, Inspection, and Process Control for Microlithography XVII. (2003).
7. H. Kim, F. L. Terry, Jr. , "In-situ UV absorption CF2 sensor for reactive ion etch process control," EOS/SPIE Conference on Microelectronic Manufacturing Technologies: Conference on Process and Equipment Control in Microelectronic Manufacturing, Edinburgh, Scotland, United Kingdom, May 18-21, 1999, Proceedings of SPIE - The International Society for Optical Engineering, v 3742, 1999, p 136-143
8. Cecilia G. Galarza , Pete Klimecky, Pramod P. Khargonekar, Fred L. Terry, Jr., "In-Situ Design Of Experiments For A Reactive Ion Etching Process," MRS Spring Meeting, San Francisco, CA, April 7, 1999.
9. F. L. Terry, Jr., "In Situ Monitoring of III-V Processing," (Invited Talk), III-V and IV-IV Materials and Processing Challenges for Highly Integrated Microelectronics and Optoelectronics, Materials Research Society Symposium Proceedings Vol. 535, pp. 189-200 (December, 1998).
10. W. Kong, H.
T. Huang, M. E. Lee, C. Galarza, W. Sun, and F. L. Terry, Jr., "Analysis of
Time-Evolved Spectroscopic Ellipsometry Data from
Patterned Structures for Etching Process Monitoring and Control," paper 19.2,
SRC TECHCON,
11. M. E. Lee, C. Galarza, W. Kong, W. Sun, and F. L. Terry, Jr., "Analysis of Reflectometry and Ellipsometry Data from Patterned Structures," International Conference on Characterization and Metrology for ULSI Technology, Gaithersburg, MD, March 23-27, 1998, AIP Conference Proceedings 449, pp. 331-5 (1998).
12. T. L. Vincent, P. I. Klimecky, W. Sun, P. P. Khargonekar, and F. L. Terry, Jr., "A Highly Accurate Endpoint Method for a TFT Back Channel Recess Etch," SID/IEEE International Display Research Conference Digest, Toronto, Canada, September 15-19, 1997, pp. 274-7 (1997).
13. T. E. Benson, A. Ramamoorthy, and F. L. Terry, Jr, "High Accuracy Optical Measurements of Polycrystalline Silicon for Real-Time and Run-to-Run Process Control", SRC Techcon, Pheonix, Ar., Sept 12-14, 1996.
14. M-E. Lee
and F. L. Terry, Jr., "A Diffractive Technique for Reactive Ion Etching (RIE)
Process Monitoring and Control" SRC Techcon, Pheonix, Ar.,
15. P. P. Khargonekar and F. L. Terry, Jr., "Control of Semiconductor
Manufacturing: Curriculum Development Under An NSF Combined Research-Curriculum
Grant," Proc. 1995 American Control Conf.,
16. T. L. Vincent, P. P. Khargonekar, and F. L. Terry, Jr., "An extended Kalman filter method for fast in-situ etch rate measurements," in Diagnostic Techniques for Semiconductor Materials Processing II, (eds. S. W. Pang, et al.), MRS Symposium held November 27-30, 1995 Boston, MA, pp. 87-93, Materials Research Society, Pittsburgh, PA, 1995.
17. M. E. Elta, J. S. Freudenberg, J. W. Grizzle, P.P. Khargonekar, and F. L. Terry, Jr., "Improving RIE Process Robustness via Real-Time Feeback Control," Electrochem. Soc. Meeting, Reno, Nevada, Proceedings of the Symposium on Process Control, Diagnostics, and Modeling in Semiconductor Manufacturing, pp. 148-56, May, 1995.
18. J. S. Herman, T. E. Benson, O. D. Patterson, C. Y. Chen, A. T. Demos, P. P. Khargonekar, F. L. Terry Jr., and M. E. Elta, "Real-time Control of Reactive Ion Etching of Amorphous Silicon for Thin Film Transistor Applications," Proc. 2nd Symposium on Thin Film Transistor Technologies, (ed. Y. Kuo), The Electrchemical Society, Miami Beach, FL, pp. 68-76, October,1994.
19. T. L. Vincent, P. P. Khargonekar, B. A. Rashap, F. L. Terry, Jr., and M. Elta, "Nonlinear System Identification and Control of a Reactive Ion Etcher," Proc. 1994 American Control Conference, pp. 902-906.
20. M. E. Elta, J. Fournier, J. S. Freudenberg, M. D. Giles, J. W. Grizzle, P. T. Kabamba, P. P. Khargonekar, S. Lafortune, S. M. Meerkov, B. A. Rashap, F. L. Terry, Jr., "Real-time Feedback Control of Reactive Ion Etching," and T. Vincent, Proc. 1993 SPIE Conference on Microelectronics Manufacturing, Proc. of SPIE, 2091, pp. 438-451 (1994).
21. M. E. Elta, H. Etemad, J. S. Freudenberg, M. D. Giles, J. W. Grizzle,
P. T. Kabamba, P. P. Khargonekar, S.
Lafortune, S. M. Meerkov, J. R. Moyne,
B. A. Rashap, D. Teneketzis,
and F. L. Terry, Jr., "Applications of
Control to Semiconductor Manufacturing: Reactive Ion Etching", Proc. 1993
American Control Conference,
22. B. A. Rashap, P. P. Khargonekar, J. W. Grizzle, M. E. Elta, J. Freudenberg, and F. L. Terry, Jr., "Real-time Control of Reactive Ion Etching: Identification and Disturbance Rejection," Proc. 32nd IEEE Conference on Decision and Control, pp. 3379-85, 1993.
23. T. Morris, F. L. Terry, Jr., M. E. Elta, "Utilizing Diffraction Imaging for Non-Destructive Wafer Metrology," 1993 SPIE Symposium on Microlithography, March 1-5, 1993, San Diego, Ca., Proceedings of the SPIE, 1926, pp. 27-32 (1993).
24. D. S. Grimard, F. L. Terry, Jr., and M. E. Elta, "Theoretical and Practical Aspects of Real-Time Fourier Imaging," SPIE Symposium on Real-Time Monitoring and Control, Santa Clara, CA, October, 1990, Proceedings of the SPIE, 1392, pp. 535-42 (1991).
25.
26. T. J. Drummond and J. Gee (Sandia National Laboratories), and F. L. Terry, Jr. and R. Weng (Univ. of Michigan), "Application of InAlAs/GaAs Superlattice Alloys to GaAs Solar Cells," presented at the IEEE Photovoltaics Specialist Conference, Kissimee, Fl., May 21- 25, 1990, Conference Record of the 21st IEEE Photovoltaic Specialist Conference-1990, pp. 105-10.
27. J. Mo, A. L. Robinson, D. Fitting, P. Carson, and F. L. Terry, Jr., "A Micromachined Diaphragm Structure for Integrated Ultrasound Transducers", IEEE Ultrasonics Symposium, Montreal, Quebec, Canada, vol. 2, pp. 801-4 (October 3-6, 1989).
28. R. B.
Brown, F. L. Terry, and K. C. Wu, "High temperature microelectronics-expanding
the applications for smart sensors," International Electron Devices Meeting,
29. M. L. Naiman, F. L. Terry, Jr., J.A. Burns, J.I. Raffel, and R. Aucoin, "Properties of Thin Oxynitride Gate Dielectrics Produced by Thermal Nitridation of Silicon," IEEE IEDM Techn. Digest, p. 562-4 (Dec., 1980).
1.
Fred L.
Terry, Jr., "Use of Multiple Real-time Sensors for Improved Process
Understanding and Control: Cl2 Etching of Polycrystalline Si," invited
presentation, SEMATECH AEC/APC Workshop, Ann Arbor, MI. September 29, 2009.
2.
Elson Liu and Fred L.
Terry, Jr., "Immersion Scatterometry for Improved
Nano-Scale Topography Measurements," 4th International Conference on
Spectroscopic Ellipsometry, June 11-15, 2007,
3.
Pete I. Klimecky and Fred L. Terry, Jr., "A multi-sensor study of
Cl2 etching of polycrystalline Si," 4th International Conference on
Spectroscopic Ellipsometry, June 11-15, 2007,
4.
Chenan Xia,
Malay Kumar, Ojas P. Kulkarn1, Mohammed N. Islam, Fred L. Terry, Daniel A.
Nolan, William A. Wood, "Super-Continuum Generation to 3 µm in Fused Silica
Fiber with Nanosecond Diode Pumping," CLEO paper CThV5,
5.
Fred
L. Terry, Jr., "Chamber Wall Effects on Polycrystalline-Si
Reactive Ion Etching in Cl2: A Multiple Real-Time Sensors Study,"
Northern California American Vacuum Society Plasma Etch Users Group Meeting,
September 8, 2005,
6.
Pete I. Klimecky, Jessy W. Grizzle, and Fred L. Terry, Jr., "Elimination
of the RIE 1st Wafer Effect: Real-Time Control of Plasma Density," SEMATECH
Advanced Equipment Control/Advanced Process Control Symposium, Snow Bird,
7.
Hsu-Ting Huang, Ji-Woong Lee, Pete Klimecky, Pramod P. Khargonekar, and Fred L.
Terry, Jr., "In Situ Monitoring Of Deep Sub-mm
Topography Evolution And Endpoint Detection During Reactive Ion Etching,"
SEMATECH AEC/APC Symposium XIII, October 6-11, 2001, Banff, Alberta, Canada
8. Hsu-Ting Huang, Brooke S. Stutzman, Wei Kong, Pete Klimecky, and Fred L. Terry, Jr., "Real Time In Situ Observation of Deep Submicron Topography Evolution Using Spectroscopic Ellipsometry and Reflectometry," AVS International Conference on Metallic Coatings and Thin Films (ICMCTF), San Diego, CA., May 1, 2001. (invited talk by Fred Terry)
9. Hsu-Ting Huang, Ji-Woong Lee, Brooke S. Stutzman, Pete Klimecky, Craig Garvin, Pramod P. Khargonekar, and Fred L. Terry, Jr., "Real Time In Situ Monitoring of Deep Sub-µm Topography Evolution during Reaction Ion Etching," SEMATECH AEC/APC Symposium, Lake Tahoe, NV., September 25-28, 2000. (One of 4 best student paper awards at this conference)
10. P. Klimecky, C. Garvin,
"Plasma Density & Resonant Cavity Modes vs. Chamber Condition in High
Density RIE," SEMATECH AEC/APC Symposium,
11. Hsu-Ting
Huang, Wei Kong, Brooke Stutzman, and Fred L. Terry,
Jr., "Use of Spectroscopic Ellipsometry for Submicron
Topography Measurements," SEMATECH AEC/APC Symposium, Vail, Co.,
12. B.S. Stutzman, H.-M. Park, P. Klimecky,
C. Garvin, D. Grimard, D. Schweiger, and F.L. Terry, Jr, "In-Situ Real-Time
Spectroscopic Ellipsometry Measurements on a LAM TCP
9400SE," Abs. 236, 195th Electrochemical Society Meeting, Seattle, Wa.,
13. H.-T.
Huang, W. Kong, H. Kim, W. Sun, and F. L. Terry, Jr., "Normal Incidence SE/RDS
for Critical Dimension Monitoring," Abs. 244, 195th Electrochemical
Society Meeting,
14.
15. Brooke S. Stutzman, Wei Kong, Hsu-ting Huang, Hunsuk Kim, Fred L. Terry Jr., "Measurement of Evolution of Grating Structures Using Off-Normal Spectral Reflectometry," abstract SC08.09, focus session on Industrial Applications of Optical Spectroscopy, American Physical Society Centennial Meeting, Atlanta, GA, March 20-26, 1999.
16. Brooke S. Stutzman, Fred L. Terry Jr., "Characterization of Film
Thickness Using Off-Normal Spectral Reflectometry,"
abstract KW2.07, APS 51st Annual Gaseous Electronics Conference & 4th
International Conference on Reactive Plasmas,
17. Siddharth Ramachandran, S.G. Bishop, Univ. Illinois; F.L. Terry, Univ. of Michigan, "Guided-mode size control over a large range by direct-write mechanisms in chalcogenide glasses:pplications for optoelectronic interconnections," CLEO/IQEC 98, San Francisco, CA, paper CTHAA4, May 7, 1998.
18. S. C. Shannon, J. P. Holloway, M. Brake, D. Grimard, and F. L. Terry, Jr., "Characterization and Optimization of Argon Sputter Etching of SiO2 in the GEC Reference Cell," in Abstract volume for the IEEE International Conference on Plasma Science, p. 124, May 19-22, 1997.
19. T. L. Vincent, P. P. Khargonekar and F. L. Terry, Jr., "Real time estimation and feedback control of etch rate and etch depth using nonlinear filtering techniques," in: Abstracts volume for 190th Electrochemical Society Meeting, San Antonio, TX, October 6-11, p. 375 (1996).
20. Tyrone E. Benson, Arun Ramamoorthy, Leonard I. Kamlet, and Fred L. Terry, "High-Speed, High-Accuracy Optical Measurements of Polycrystalline Silicon for Process Control", Jr., Second International Conference on Spectroscopic Ellipsometry, Charleston, S. C. , May 12-15, 1997.
21. Leonard I. Kamlet and Fred L. Terry, Jr. , "Dielectric Function
Modeling for Lightly Strained InAlAs," Second
International Conference on Spectroscopic Ellipsometry,
22. L. I. Kamlet, F. L. Terry, Jr., and G. N. Maracas, "A Temperature-Dependent Model for the Complex Dielectric Function of GaAs for Growth Control," 38th Annual IEEE/TMS Electronic Materials Conf., Santa Barbara, Ca., June 26-8, 1996.
23. C. K. Hanish, L. I. Kamlet, S. Thomas, III, J. W. Grizzle, S. W. Pang, and F. L. Terry, Jr., "Modeling and Algorithm Development for Automatic Optical Endpointing of an HBT Emitter Etch," 38th Annual IEEE/TMS Electronic Materials Conf., Santa Barbara, Ca., June 26-8, 1996.
24. Ying Xiao, Jun-Hao Xu, Johan Jonsson, K.V. Rao, C. Uher, and F. L. Terry, Jr., "Wavelength Dependence of Kerr-Rotation in e-Beam Deposited Pd/(Pt/Co/Pt) Modulated Multilayers: Effect of Oxidized Si Substrates," Magneto-Optical Recording International Symposium (MORIS), Noordwojkerhout, Netherlands, April 29-May 2, 1996.
25. Leonard Kamlet and Fred L. Terry, Jr., "A Composition-Dependent Model for the Complex Dielectric Function of In1‑xGaxAsyP1‑y Lattice-Matched to InP, TMS/IEEE Electronics Materials Conference, Charlottesville, Virginia, June 21-23, 1995.
26. Tyrone E. Benson, Leonard Kamlet, Pete Klimecky, and Fred L. Terry, Jr., "In Situ Spectroscopic Reflectometry for Polycrystalline Silicon Thin Film Etch Rate Estimation," TMS/IEEE Electronics Materials Conference, Charlottesville, Virginia, June 21-23, 1995.
27. T. E. Benson, C. K. Hanish, P. D. Hanish, L.I. Kamlet, B. A. Rashap, J. S. Freudenberg, J. W. Grizzle, P.P. Khargonekar, and F. L. Terry, Jr, "Sensor Systems for Real-Time Feedback Control fo Reactive-Ion Etching," American Vacuum Society Conf. on Plasma Processing, San Jose, Ca., May 2-3, 1995.
28. P. D. Hanish, J. W. Grizzle, M. D. Giles, and F. L. Terry, Jr., "A
Model-Based Technique for Real-Time Estimation of Absolute Fluorine
Concentration in a CF4/Ar Plasma," 41st National
Symposium of the AVS, Oct. 24-28, 1994,
29. J. S.
Herman and F. L. Terry, Jr., "Hydrogen Sulfide Plasma Passivation of Indium
Phosphide," IEEE/TMS Electronic Materials Conference,
30. J. S. Herman
and F. L. Terry, Jr, "Plasma Passivation of GaAs,"
American Vacuum Society Meeting,
31. F. L. Terry, Jr., J. Freudenberg, M. Elta, M. Giles, J. Grizzle, S. LaFortune, P. Kabamba, P. Khargonekar, S. Meerkov, and D. Teneketzis, "Sensor-Based Control for Semiconductor Manufacturing: Plasma Etching as a Process Vehicle," IEEE Wafer Level Reliability Workshop, Lake Tahoe, Ca., October 25-28, 1992.
32. M. E. Sherwin, G. O. Munns, D. T. Nichols, P. K. Bhattacharya, and F. L. Terry, Jr., "Growth of InGaAsP by CBE for SCH Quantum Well Lasers Operating at 1.55 and 1.4 µm," 3rd Inter. Conf. on Chemical Beam Epitaxy and Related Growth Techniques, Oxford, England, 1992.
33. M. E.
Sherwin, F. L. Terry, Jr., G. O. Munns, and G. I.
Haddad, "Investigation and Optimization of Interface Transition Widths for InGaAs/InP and InP/InGaAs Grown by Chemical Beam
Epitaxy using Spectroscopic Ellipsometry,"
presented at the TMS Fifth Biennial Workshop on Organometallic Vapor Phase Epitaxy,
34. H. W. Trombley, F. L. Terry, Jr., and M. E. Elta, "The Simulation of Low Pressure Argon RF Glow Discharge using a Self-Consistent Particle Model," in Abstract volume for the IEEE International Conference on Plasma Science, Williamsburg, Va., June 3-5, 1991.
35. M. E. Sherwin, G. O. Munns, E. G. Woelk, T.J. Drummond, M. E. Elta, F. L. Terry, Jr., and G. I. Haddad, "The Design of an ECR Plasma System and Its Application to InP Grown by CBE," Sixth International Conference on Molecular Beam Epitaxy, University of California, San Diego, CA, August 27-31, 1990.
36. M. E. Sherwin, G. O. Munns, M. E. Elta, E. G. Woelk, S. B. Crary, F. L. Terry, Jr., and G. I. Haddad, "The Design of an ECR Plasma System and Its Application to InP Grown by CBE," Sixth International Conference on Molecular Beam Epitaxy, University of California, San Diego, CA, August 27-31, 1990.
37. J. Mo, A.
L. Robinson, D. Fitting, P. Carson, and F. L. Terry, Jr., "Improvement of
Integrated Ultrasonic Transducer Sensitivity," 5th International Conference on
Sensors and Actuators,
38. W. T. Shiau and F. L. Terry, Jr., "Reoxidized Nitrided Oxides as High Temperature MOS Gate Dielectrics," IEEE/TMS Electronic Materials Conference, Boulder, CO (1988).
39. W. T. Shiau and F. L. Terry, Jr., "Reoxidized Nitrided Oxides as High Temperature MOS Gate Dielectrics," IEEE Solid-State Sensor and Actuator Workshop, poster presentation, Hilton Head Island, SC, 1988 Solid State Sensor and Acutator Tech. Dig. pp. 100-1, (1988).
40. M. A. Schmidt, F. L. Terry, Jr., B. P. Mathur, and S. D. Senturia, "Inversion Layer Mobility of MOSFET’s with Nitrided Oxide Gate Dielectrics," IEEE Device Research Conference, Boulder, CO (June, 1985).
41. F. L. Terry, Jr., P .W. Wyatt, M. L. Naiman, B. P. Mathur, C. T. Kirk, and S. D. Senturia, "High-Field Electron Capture and Emission in Nitrided Oxides," IEEE Device Research Conference, Santa Barbara, CA (June, 1984).
42. F. L. Terry, Jr., R. J. Aucoin, M. L. Naiman, P .W. Wyatt, and S. D. Senturia, "Elimination of Radiation-Induced Interface States By Nitridation," IEEE Device Research Conference, Burlington, VT (June, 1983).
43. F. L.
Terry, Jr., M. L. Naiman,
R. J. Aucoin, and S. D. Senturia,
"Megarad-Resistant 10nm Gate Dielectrics," IEEE
Nuclear and Space Radiation Effects Conference,
44. R. J. Aucoin, M. L. Naiman, F. L.
Terry, Jr., and R. Reif, "Kinetics of Nitridation of Silica Films," Abs. 377, Electrochem.
Soc. 160th Meeting, p. 913,
1. "Nanotechnology - An Overview," Fred L. Terry, Jr., presentation at the Fifth Annual Emerging Industry Symposium The Business Reality of Micro and Nano Technologies, March 31- April 1, 2005, Four Points Sheraton, Ann Arbor, sponsored by the Samuel Zell & Robert H. Lurie Institute for Entrepreneurial Studies (University of Michigan) and the Michigan Small Tech Association (MISTA). (Invited Talk)
2.
"Metrology Challenges for End-of-Roadmap Nano-scale
CMOS and Possible Post-CMOS Nanoelectronics," Fred L.
Terry, Jr., Integrated Metrology Association Meeting,
3.
"Optical Topography (Scatterometry)
Research at
4.
"In Situ
Spectroscopic Ellipsometry and Reflectometry
for Real-Time Topography Monitoring," Hsu-Ting Huang,
5. "In Situ Measurements of Patterned Structures," Hsu-Ting Huang, Wei Kong, Brooke Stutzman, and Fred L. Terry, Jr., Workshop on Spectroscopic Ellipsometry (WISE), University of Michigan, Ann Arbor, May 8-9, 2000.
6. "Analysis of Reflectometry and Ellipsometry Data from Patterned Structures," Meng-En Lee, Cecilia G. Galarza, Wei Kong, Weiqian Sun and Fred L. Terry, Jr., poster presentation at Gordon Conference on Nanofabrication, Tilton, NH., June, 1998.
7.
K. Khargonekar, T. L.
Vincent, and F. L. Terry, Jr., "A Real-Time Etch Rate Estimation Algorithm for
Single/Multiple Wavelength Reflectometry," Sematech Advanced Equipment Control/Advanced Process
Control Workshop,
8.
Tim M. Morris, Fred L. Terry, Jr., Michael E. Elta, and
Hossein Etemad, "Non
Destructive Optical Metrology and The Fourier Imaging System," presented at the
SRC Technology Transfer Course: Scatterometry for
Photoresist Process Characterization,
9. E. Elta, H. Etemad, J.P. Fournier, J. S. Fruedenberg, M. D. Giles, J. W. Grizzle, P.T. Kabamba, P.P. Khargonekar, S. Lafortune, S.M. Meerkov, J.R. Moyne, B. Rashap, D. Teneketzis, and F. L. Terry, Jr., "Real-Time Feedback Control of Reactive Ion Etching," SEMATECH Workshop on Advanced Equipment Control, Dallas, TX, April 19-22, 1993.
10. Grimard, M. E. Elta, F. L. Terry, Jr., "Utilizing Fourier Imaging for Non-Destructive, Non-Contact Wafer Topography Measurements" 1992 SRC/DARPA CIM/IC Workshop, Stanford University, Palo Alto, CA, August 24, 1992.
11. Fred L. Terry, Jr. and Michael E. Elta, "Utilizing Diffraction Imaging for Non-Destructive Wafer Metrology," SEMATECH Workshop on Advanced Equipment Control, Phoenix, AZ, March 3-5, 1992.
12. E. Sherwin, G. O. Munns, D.T. Nichols, F. L. Terry, Jr., P.K. Bhattacharya, and G. I. Haddad, "Chemical Beam Epitaxy for the Growth of InP Based Electronic and Opto-Electronic Devices," Second Workshop on Electronic and Optoelectronic Materials for Tactical and Strategic Applications, Huntsville, Al., Oct. 8-10, 1991.
13. Chiao-Fe Shu, Ramesh Jain, Fred
Terry, and Michael Elta, "A Real-Time Fourier Imaging System for Monitoring
Plasma," the Proceedings of the Sixth Annual SRC/DARPA CIM-IC Workshop
14.
15.
16.
1. "Real-Time Monitoring and Control of Etch Rates and Critical Dimensions in Reactive Ion Etching," Fred L. Terry, Jr., presentation at Novellus Corp., San Jose, CA, Sept. 10, 2005.
2.
"Optical Metrology Research: Optical Critical Dimension
& Real-Time Etch Depth Modeling," Fred L. Terry, Jr., presentation at AMD,
3. "Immersion Scatterometry for Improved Feature Resolution and High Speed Acquisition of Resist Profiles," Fred L. Terry, Jr. and Joseph J. Bendik, presentation at KLA-Tencor Corp., San Jose, CA, May 25, 2005.
4.
"Real-Time Monitoring and Control of Etch Rates and
Critical Dimensions in Reactive Ion Etching," Fred L. Terry, Jr., invited
corporate seminar at Lam Research Corporation,
5. "Real Time In Situ Observation of Deep Submicron Topography Evolution Using Spectroscopic Ellipsometry and Reflectometry," Hsu-Ting Huang, Brooke S. Stutzman, Wei Kong, Pete Klimecky, and Fred L. Terry, Jr., presentation at Applied Materials Corporation, Santa Clara, CA, May 22, 2001.
6. "Recent Developments In Situ and In Line Spectroscopic Ellipsometry for Topography Measurements," Fred L. Terry, Jr., presentation at KLA-Tencor Corp., San Jose, CA, May 21, 2001.
7. "Spectroscopic Ellipsometry from Gratings for Topography Extraction," Fred L. Terry, Jr., presentation at KLA-Tencor Corp., San Jose, CA, Feb. 10, 2000.
8. "Real-Time Monitoring and Control of Reactive Ion Etching," Fred L. Terry, Jr., presentation at KLA-Tencor Corp., San Jose, CA, Feb. 10, 2000.
9. "Spectroscopic Ellipsometry for Critical Dimension Metrology and Reactive Ion Etch Control," Fred L. Terry, Jr., presentation at Defense Evaluation and Research Agency (DERA), Great Malvern, UK, May, 1999.
10. "Real-Time Feedback Control of Plasma Processes," Fred L. Terry, Jr., presentation at KLA-Tencor Corp., San Jose, CA, Feb. 9, 1998.
11. Tutorial on Spectroscopic Ellipsometry for Thin Film Measurements, Fred L. Terry, Jr., presentation at National Semiconductor Corporation, January 14, 1997.
12. "Applications of Spectroscopic Ellipsometry to III-V and Si Fabrication Problems," Fred L. Terry, Jr., presentation at IBM T.J. Watson Research Laboratories, September, 1990.
1.
"Very High Accuracy Critical Dimension Measurements by
Optical Diffraction for Semiconductor Manufacturing Control," Fred L. Terry,
Jr.,
2. "Use of Reflected Light Measurements for Non-Destructive Measurement of Deep Submicron Topography and Semiconductor Manufacturing Control," Fred L. Terry, Jr., Michigan State University of Michigan, ECE Department Seminar, April 4, 2003.
3.
"Use of Spectroscopic Ellipsometry
and Related Reflected Light Techniques for High-Speed, Nondestructive
Measurement of Nanostructures," Fred L. Terry, Jr.,
4. "Spectroscopic Ellipsometry for Critical Dimension Metrology and Reactive Ion Etch Control," Fred L. Terry, Jr., EECS 590 graduate seminar, fall, 2000.
5.
"Reflection-based Optical Metrology for Electronics
Materials Characterization and Process Control," Fred L. Terry, Jr., First
Annual Michigan Materials Research Symposium (MMRS),
6.
"MOS Devices for Hostile Environments," Center for
Integrated Systems and Circuits Symposium, Dept of
EECS,
1.
"Ultrasonic
Image Sensing Array and Method," United States Patent Number 5,160,870, issued
November 3, 1992,
2.
"Ultrasonic Image Sensing Array and Method Extensions,"
1.
Pete Ivan Klimecky (chairman),
"Plasma density control for reactive ion etch variation reduction in industrial
microelectronics," Defense on
2.
Hsu-Ting Huang (chairman), "High-accuracy, high-speed
measurement of deep submicron and nano-structure
gratings using specular reflected light techniques," Defense on
3.
Wei Kong (chairman), "Analysis of Spectroscopic Ellipsometry Data from Patterned Structures for Etching
Process Monitoring and Control," Defense on
4.
Brooke S. Stutzman (chairman),
"Correlation of Process with Topography Evolution During Reactive Ion Etching,"
Defense on
5.
Meng-en Lee (chairman), "High-Speed
Analysis of Surface Topography on Semiconductor Wafers by Optical Diffraction
Techniques," Defense on
6.
Tyrone Benson (chairman), "Improved Optical Methods for
Characterizing Polycrystalline Silicon, with Emphasis on Optical Scattering
Losses," Defense on
7.
Len Kamlet (chairman), "Phenomenological
Modeling of the Optical Properties of Semiconductors for Process
Characterization and Control," Defense on
8.
John C. Cowles
(co-chairman with Prof. G. I. Haddad), "InP-Based
Heterojunction Bipolar Transistor Technology for High
Speed Devices and Circuits", Defense on
9. Ru-Liang Lee (chairman), "Self-Aligned-Gate Heterostructure Field Ettect
Transistors - Process Development and Device Comparison" Defense on
10. Jonathan S.
Herman (chairman), "Plasma Passivation of Compound Semiconductors for Device
Applications", Defense on
11. Marc
E. Sherwin (chairman), "The Application of Chemical Beam Epitaxy
to InP Based Materials and Devices", Defense on
12. Henry Trombley (co-chairman with Dr. Michael E. Elta), "Modeling
of RF Glow Discharges for Microelectronics Manufacturing Processes", Defense on
13. Wei-Tsun Shiau (chairman), "Reliability of MOSFET Gate Insulator Layers
at High Temperatures", Defense on
14.
15. Tina Jane Grimard (co-chairman with Dr. Michael E. Elta), "Computer Modeling of Plasma Processing and Equipment for Microelectronic Applications", Defense on May 12, 1989, Currently with IBM Corp., East Fishkill, New York
16. Michael S.
Barnes (co-chairman with Dr. Michael E.
Elta), "Computer Modeling of RF Glow Discharges for the Study of Plasma
Processing in Microelectronics",
1.
2. Dept of EECS Faculty Achievement Award, 2002
3. Senior Member of the IEEE, 1999
4. Dept of EECS Teaching Award 1992
5. Advisor for 3 best student paper awards and 1 honorable mention at SEMATECH Advanced Equipment Control/Advanced Process Control Symposia
6. Advisor for 1 best student paper award at SRC TECHCON 98 (general conference of SRC funded programs
1. EE Undergraduate Chief Program Advisor, F04-Su08
2. EECS Curriculum Committee member F04-(on going)
3. EECS Undergraduate Committee member F04-(on going)
4. Chair, SSEL Expansion Committee, January, 2004 -present
5. Director,
6. Solid State Electronics Laboratory Operations Committee, 1986-present
7. EE Graduate Program Financial Aid & Domestic Admissions and Chair, W02- beginning of F04
8. EE Curriculum Committee Member, F01-F02
9. EE Curriculum Committee Chairman, F98-W00
10.
11. Chair’s Ad Hoc Program Committee on EECS BS Programs F99-W00
1. CoE Diversity and Outreach Council, September, 2008-
2. CoE delegation to NRC Engineering Education Leadership Institute, Indian Lakes Resort, Il., July 23-28, 2006.
3. CoE Martin Luther King Committee (co-chair, F05-W06)
4. Tenure and Promotion Committee for Prof. Michael Flynn, F05
5. Reappointment (3 year) Review Committee for Prof. Jamie Phillips, W05
6. Faculty Advisory Committee on Undergraduate Admissions (W04-F04)
7. Tenure
and Promotion Committee for Prof.
8. Reappointment
Review Committee Chair for Prof.
9. Rules Committee (member 97-00, chair F99-W00)
10. CoE Curriculum 2000 Working Group (member, F99-W00)
11. Promotion Committee for Dr. James Moyne (assistant to associate research scientist) F98
1. Associate Editor, IEEE Transactions on Nanotechnology, from journal’s beginning in 2002 to Sept, 2007
2. Advisory Panel On Nanotechnology, National Electrical Manufacturers Association (NEMA), March, 2006-present
3. Program
committee member for Emerging Metrology, AVS Second International Conference on
Microelectronics and Interfaces (ICMI),
4. Workshop Chair and host, Workshop on Spectroscopic Ellipsometry (WISE), University of Michigan, Ann Arbor, MI, May 8-9, 2000.
5. Conference on Lasers and Electro-optics (CLEO) Program Committee (subcommittee on monitors for process control and environment) 1997, 98
Born in