Jamie Phillips

Arthur F. Thurnau Professor

Jamie Phillips

Arthur F. Thurnau Professor

Jamie Phillips

Jamie Phillips

Arthur F. Thurnau Professor
Associate Chair for Undergraduate Affairs, ECE Division

University of Michigan
EECS Department
Electrical & Computer Engineering
2405 EECS
Ann Arbor, MI 48109
Tel: (734) 764-4157
Email:

Publications

Below is a listing of peer-reviewed journal publications from our group. For a full list that includes conference proceedings and presentations, please see the Phillips Biography.

[1] M. Scherr, M. Barrow and J. Phillips, "Long-wavelength infrared transmission filters via two-step subwavelength dielectric gratings", Optics Letters 42, 518-521 (2017).

[2] I. Ramiro, J. Villa, C. Tablero, E. Antolín, A. Luque, A. Martí, J. Hwang, J. Phillips, A. J. Martin and J. Millunchick, "Analysis of the intermediate-band absorption properties of type-II GaSb/GaAs quantum-dot photovoltaics", Physical Review B 96, 125422 (2017).

[3] I. Ramiro, E. Antolin, H. Jinyoung, A. Teran, A. J. Martin, P. G. Linares, J. Millunchick, J. Phillips, A. Marti and A. Luque, "Three-bandgap absolute quantum efficiency in GaSb/GaAs quantum dot intermediate band solar cells", IEEE Journal of Photovoltaics 7, 508-12 (2017).

[4] E. Moon, D. Blaauw and J. D. Phillips, "Subcutaneous Photovoltaic Infrared Energy Harvesting for Bio-implantable Devices", IEEE Transactions on Electron Devices 64, 2432-2437 (2017).

[5] E. Moon, D. Blaauw and J. D. Phillips, "Small-Area Si Photovoltaics for Low-Flux Infrared Energy Harvesting", IEEE Transactions on Electron Devices 64, 15-20 (2017).

[6] E. Moon, D. Blaauw and J. Phillips, "Infrared Energy Harvesting in Millimeter-Scale GaAs Photovoltaics", IEEE Transactions on Electron Devices 64, 4554 - 4560 (2017).

[7] J. Easley, E. Arkun, M. Carmody and J. Phillips, "Variable-Field Hall Effect Analysis of HgCdTe Epilayers with Very Low Doping Density", Journal of Electronic Materials 46, 5479-5483 (2017).

[8] A. S. Teran, E. Moon, W. Lim, G. Kim, I. Lee, D. Blaauw and J. D. Phillips, "Energy Harvesting for GaAs Photovoltaics Under Low-Flux Indoor Lighting Conditions", IEEE Transactions on Electron Devices 63, 2820-2825 (2016).

[9] S. Sengupta, T. Templeman, C. Chen, E. Moon, M. Shandalov, V. Ezersky, J. Phillips and Y. Golan, "Chemical epitaxy and interfacial reactivity in solution deposited PbS on ZnTe", Journal of Materials Chemistry C 4, 1996-2002 (2016).

[10] I. Ramiro, E. Antolín, J. Hwang, A. Teran, A. J. Martin, P. G. Linares, J. Millunchick, J. Phillips, A. Martí and A. Luque, "Three-Bandgap Absolute Quantum Efficiency in GaSb/GaAs Quantum Dot Intermediate Band Solar Cells", IEEE Journal of Photovoltaics 7, 508-512 (2016).

[11] J. Foley, S. Daly, C. Lenaway and J. Phillips, "Investigating Student Motivation and Performance in Electrical Engineering and its Subdisciplines", IEEE Trans. Education 59, 241-247 (2016).

[12] M. DeJarld, A. Teran, M. Luengo-Kovac, L. Yan, E. Moon, S. Beck, C. Guillen, V. Sih, J. Phillips and J. Mirecki Millunchick, "The effect of doping on low temperature growth of high quality GaAs nanowires on polycrystalline films", Nanotechnology 27, 495605 (2016).

[13] A. S. Teran, C. Chen, E. Lopez, P. G. Linares, I. Artacho, A. Marti, A. Luque and J. D. Phillips, "Heterojunction Band Offset Limitations on Open-Circuit Voltage in p-ZnT-ZnSe Solar Cells", IEEE J. Photovoltaics 5, 874-877 (2015).

[14] A. Teran, J. Wong, W. Lim, G. Kim, Y. Lee, D. Blaauw and J. Phillips, "AlGaAs Photovoltaics for Indoor Energy Harvesting in mm-Scale Wireless Sensor Nodes", IEEE Transactions on Electron Devices 62, 2170-2175 (2015).

[15] J. Foley and J. Phillips, "Normal incidence narrowband transmission filtering capabilities using symmetry protected modes of a dielectric grating", Optics Letters 40, 2637-2640 (2015).

[16] L. Zhou, C. Chen, H. Jia, C. Ling, D. Banerjee, J. Phillips and Y. Wang, "Oxygen Incorporation in ZnTeO Alloys via Molecular Beam Epitaxy", Journal of Electronic Materials 43, 889-893 (2014).

[17] S. A. Sis, S. Lee, V. Lee, A. K. Bayraktaroglu, J. D. Phillips and A. Mortazawi, "Intrinsically switchable, high-Q ferroelectricon-silicon composite film bulk acoustic resonators", Ultrasonics, Ferroelectrics and Frequency Control, IEEE Transactions on 61, 231-238 (2014).

[18] E. Plis, S. Myers, D. Ramirez, E. P. Smith, D. Rhiger, C. Chen, J. D. Phillips and S. Krishna, "Dual color longwave InAs/GaSb type-II strained layer superlattice detectors", Infrared Physics & Technology (2014).

[19] J. Hwang, K. Lee, A. Teran, S. Forrest, J. D. Phillips, A. J. Martin and J. Millunchick, "Multiphoton Sub-Band-Gap Photoconductivity and Critical Transition Temperature in Type-II GaSb Quantum-Dot Intermediate-Band Solar Cells", Physical Review Applied 1, 051003 (2014).

[20] J. M. Foley, S. M. Young and J. D. Phillips, "Symmetry-protected mode coupling near normal incidence for narrow-band transmission filtering in a dielectric grating", Physical Review B 89, 165111 (2014).

[21] C. Chen, J. Zheng, K. Nguy, F. Naab and J. Phillips, "Distinguishing Optical Behavior of Oxygen States and Native Deep Level Emission in ZnTe", Journal of Electronic Materials 43, 879-883 (2014).

[22] E. Antolin, C. Chen, I. Ramiro, J. Foley, E. Lopez, I. Artacho, J. Hwang, A. Teran, E. Hernandez, C. Tablero, A. Marti, J. D. Phillips and A. Luque, "Intermediate Band to Conduction Band Optical Absorption in ZnTeO", IEEE Journal of Photovoltaics 4, 1091-1094 (2014).

[23] M. J. Abere, C. Chen, D. R. Rittman, M. Kang, R. S. Goldman, J. D. Phillips, B. Torralva and S. M. Yalisove, "Nanodot formation induced by femtosecond laser irradiation", Applied Physics Letters 105, 163103 (2014).

[24] A. J. Martin, J. Hwang, E. Marquis, E. P. Smakman, T. W. Saucer, G. V. Rodriguez, A. Hunter, V. Sih, P. M. Koenraad, J. D. Phillips and J. Mirecki Millunchick, "The disintigration of GaSb/GaAs nanostructures upon capping", Applied Physics Letters 102, 113103 (2013).

[25] A. Lin and J. D. Phillips, "Resolving Spectral Overlap Issue of Intermediate Band Solar Cells using Non-uniform Subbandgap State Filling", Progress in Photovoltaics: Research and Applications DOI: 10.1002/pip.2358, (2013).

[26] V. Lee, S. A. Sis, J. D. Phillips and A. Mortazawi, "Intrinsically Switchable Ferroelectric Contour Mode Resonators", Microwave Theory and Techniques, IEEE Transactions on 61, 2806-2813 (2013).

[27] J. Foley, S. Young and J. Phillips, "Narrowband Mid-Infrared Transmission Filtering of a Single Layer Dielectric Grating", Applied Physics Letters 103, 071107 (2013).

[28] H. Chi, C. Chen, J. D. Phillips and C. Uher, "Transport properties of ZnTe:N thin films", Applied Physics Letters 103, 042108 (2013).

[29] C. Chen, S. J. Kim, X. Pan and J. D. Phillips, "Epitaxial growth of ZnTe on GaSb (100) using in situ ZnCl2 surface clean", Journal of Vacuum Science & Technology B 31, 03C118 (2013).

[30] A. Chen, H. Zhou, Z. Bi, Y. Zhu, Z. Luo, A. Bayraktaroglu, J. Phillips, E.-M. Choi, J. L. MacManus-Driscoll, S. J. Pennycook, J. Narayan, Q. Jia, X. Zhang and H. Wang, "A New Class of Room-Temperature Multiferroic Thin Films with Bismuth-Based Supercell Structure", Advanced Materials 25, 1028-1032 (2013).

[31] J. J. Siddiqui, J. D. Phillips, K. Leedy and B. Bayraktaroglu, "Bias-Temperature-Stress Characteristics of ZnO/HfO2 Thin Film Transistors", IEEE Transactions on Electron Devices 59, 1488-1493 (2012).

[32] J. Siddiqui, J. Phillips, K. Leedy and B. Bayraktaroglu, "Illumination instabilities in ZnO/HfO¬2 thin film transistors and influence of grain boundary charge", Journal of Materials Research 27, 2199-2204 (2012).

[33] S. J. Kim, B. C. Juang, W. Wang, J. R. Jokisaari, C. Chen, J. D. Phillips and X. Pan, "Evolution of self-assembled Type-II ZnTe/ZnSe nanostructures: Structural and electronic properties", Journal of Applied Physics 111, 093524 (2012).

[34] A. M. Itsuno, J. D. Phillips and S. Velicu, "Mid-Wave Infrared HgCdTe nBn Photodetector", Applied Physics Letters 100, 161102 (2012).

[35] A. Itsuno, J. Phillips and S. Velicu, "Design of an Auger-Suppressed Unipolar HgCdTe NBνN Photodetector", Journal of Electronic Materials 41, 2886-2892 (2012).

[36] J. Hwang, A. J. Martin, J. M. Millunchick and J. D. Phillips, "Thermal emission in type-II GaSb/GaAs quantum dots and prospects for intermediate band solar energy conversion", Journal of Applied Physics 111, 074514 (2012).

[37] J. Foley, A. Itsuno, T. Das, S. Velicu and J. Phillips, "Broadband Long-Wavelength Infrared Si/SiO2 Subwavelength Grating Reflector", Optics Letters 37, 1523-1525 (2012).

[38] A. Das, J. Heo, A. Bayraktaroglu, J. Phillips, W. Guo, T. K. Ng, B. Ooi and P. Bhattacharya, "Room temperature strong coupling effects in a single ZnO nanowire microcavity", Optics Express 20, 11830-11837 (2012).

[39] W. Weiming, Y. Jun, Z. Xin and J. Phillips, "Intermediate-band solar cells based on dilute alloys and quantum dots", Frontiers of Optoelectronics in China 4, 2-11 (2011).

[40] W. Wang, J. D. Phillips, S. J. Kim and X. Pan, "ZnO/ZnSe/ZnTe Heterojunctions for ZnTe-Based Solar Cells", Journal of Electronic Materials 40, 1674-1678 (2011).

[41] J. Siddiqui, J. Phillips, B. Bayraktaroglu and K. Leedy, "Admittance Spectroscopy of Interface States in HfO2/ZnO thin films", IEEE Electron Device Letters 32, 1713-1715 (2011).

[42] A. M. Itsuno, J. D. Phillips and S. Velicu, "Predicted performance improvement of Auger-suppressed HgCdTe photodiodes and p-n heterojunction detectors", IEEE Transactions on Electron Devices 58, 501-507 (2011).

[43] A. Itsuno, J. D. Phillips and S. Velicu, "Design and modeling of HgCdTe n-B-n detectors", Journal of Electronic Materials 40, 1624-1629 (2011).

[44] J. Hwang and J. Phillips, "Band Structure of Strain-Balanced GaAsBi/GaAsN Superlattices on GaAs", Phys. Rev. B 83, 195327 (2011).

[45] S. Velicu, C. H. Grein, P. Y. Emelie, A. Itsuno, J. D. Phillips and P. Wijewarnasuriya, "MWIR and LWIR HgCdTe Infrared Detectors Operated with Reduced Cooling Requirements", Journal of Electronic Materials 39, 873-881 (2010).

[46] A. M. Itsuno, P. Y. Emelie, J. D. Phillips, S. Velicu, C. H. Grein and P. S. Wijewarnasuriya, "Arsenic diffusion study in HgCdTe for low p-type doping in Auger suppressed photodiodes", Journal of Electronic Materials 39, 945-950 (2010).

[47] X. Zhu, V. Lee, J. Phillips and A. Mortazawi, "An Intrinsically Switchable FBAR Filter Based on Barium Titanate Thin Films", IEEE Microwave and Wireless Component Letters 19, 359-361 (2009).

[48] W. Wang, A. Lin, J. D. Phillips and W. Metzger, "Generation and recombination rates at ZnTe:O intermediate band states", Applied Physics Letters 95, 261107 (2009).

[49] W. Wang, A. Lin and J. Phillips, "Intermediate-Band Photovoltaic Solar Cell Based on ZnTe:O", Applied Physics Letters 95, 011103 (2009).

[50] W. Wang, W. Bowen, S. Lin, S. Spanninga and J. Phillips, "Optical Characteristics of ZnTeO Thin Films Synthesized by Pulsed Laser Deposition and Molecular Beam Epitaxy", Journal of Electronic Materials 38, 119-125 (2009).

[51] A. Lin and J. Phillips, "Drift-Diffusion Model for Intermediate-Band Solar Cell", IEEE Transactions on Electron Devices 56, 3168-3174 (2009).

[52] A. Lin and J. Phillips, "Model for Intermediate Band Solar Cells Incorporating Carrier Transport and Recombination and Application to ZnTeO", Journal of Applied Physics 105, 064512 (2009).

[53] P. Y. Emelie, J. D. Phillips, S. Velicu and P. S. Wijewarnasuriya, "Parameter extraction of HgCdTe infrared photodiodes exhibiting Auger supression", J. Phys. D 42, 234003 (2009).

[54] W. E. Bowen, W. Wang and J. D. Phillips, "Complementary Thin-Film Electronics Based on n-channel ZnO and p-channel ZnTe", IEEE Electron Device Letters 30, 1314-1316 (2009).

[55] W. Wang, S. Lin and J. Phillips, "Electrical characteristics and photoresponse of ZnO/ZnTe heterojunction diodes", Journal of Electronic Materials 37, 1044-1048 (2008).

[56] A. Lin and J. Phillips, "Optimization of random diffraction gratings in thin film solar cells using genetic algorithms", Solar Energy Materials and Solar Cells 92, 1689-1696 (2008).

[57] P. Y. Emelie, S. Velicu, C. H. Grein, J. D. Phillips, P. S. Wijewarnasuriya and N. K. Dhar, "Modeling of LWIR HgCdTe Auger-Suppressed Infrared Photodiodes Under Non-Equilibrium Operation", Journal of Electronic Materials 37, 1362-1368 (2008).

[58] E. Cagin, J. Yang, W. Wang, J. D. Phillips, S. K. Hong, J. W. Lee and J. Y. Lee, "Growth and structural properties of m-plane ZnO on MgO (001) by molecular beam epitaxy", Applied Physics Letters 92, 233505 (2008).

[59] W. Bowen, W. Wang, E. Cagin and J. D. Phillips, "Quantum confinement and carrier localization effects in ZnO/MgxZn1-xO Wells", Journal of Electronic Materials 37, 749-754 (2008).

[60] J. S. Fu, X. A. Zhu, J. D. Phillips and A. Mortazawi, "Improving Linearity of Ferroelectric-Based Microwave Tunable Circuits", IEEE Trans. Microwave Theory and Techniques 55, 354-360 (2007).

[61] P. Y. Emelie, J. D. Phillips, S. Velicu and C. H. Grein, "Modeling and Design Considerations of HgCdTe Infrared Detectors Under Non-Equilibrium Operation", J. Electron. Mater. 36, 846-851 (2007).

[62] P. Y. Emelie, J. D. Phillips, C. Fulk, J. Garland and S. Sivananthan, "Electrical Characteristics of PEDOT:PSS Organic Contacts to HgCdTe", J. Electron. Mater. 36, 841-845 (2007).

[63] E. Cagin, D. Y. Chen, J. J. Siddiqui and J. D. Phillips, "Hysteretic Metal-Ferroelectric-Semiconductor Capacitors Based on PZT/ZnO Heterostructures", J. Phys. D 40, 2430-2434 (2007).

[64] J. Siddiqui, E. Cagin, D. Chen and J. D. Phillips, "ZnO Thin Film Transistors with Polycrystalline (Ba,Sr)TiO3 Gate Insulators", Appl. Phys. Lett. 88, 212903 (2006).

[65] T. E. Murphy, K. Moazzami and J. D. Phillips, "Trap related photoconductivity in ZnO epilayers", Journal of Electronic Materials 35, 543-549 (2006).

[66] K. Moazzami, T. E. Murphy, J. D. Phillips, M. Cheung and A. N. Cartwright, "Sub-bandgap photoconductivity in ZnO epilayers and extraction of trap density spectra", Semicond. Sci. Technol. 21, 717-723 (2006).

[67] P. Y. Emelie, J. D. Phillips, B. Buller and U. D. Venkateswaran, "Free carrier absorption and lattice vibrational modes in bulk ZnO", Journal of Electronic Materials 35, 525-529 (2006).

[68] D. Chen and J. D. Phillips, "Analysis and design optimization of electrooptic interferometric modulators for microphotonics applications", IEEE J. Lightwave Technology 24, 2340-2346 (2006).

[69] D. Chen and J. D. Phillips, "Electric field dependence of piezoelectric coefficient in ferroelectric thin films", J. Electroceramics 17, 613-617 (2006).

[70] T. E. Murphy, D. Y. Chen and J. D. Phillips, "Growth And Electronic Properties Of ZnO Epilayers By Plasma-Assisted Molecular Beam Epitaxy", J. Electron. Mater. 34, 699-703 (2005).

[71] T. E. Murphy, D. Y. Chen, E. Cagin and J. D. Phillips, "Electronic Properties Of ZnO Epilayers Grown On C-Plane Sapphire By Plasma-Assisted Molecular Beam Epitaxy", J. Vac. Sci. Technol. B 23, 1277-1280 (2005).

[72] T. E. Murphy, J. O. Blaszczak, K. Moazzami, W. E. Bowen and J. D. Phillips, "Properties Of Electrical Contacts On Bulk And Epitaxial n-Type ZnO", J. Electron. Mater. 34, 389-394 (2005).

[73] K. Moazzami, J. Phillips, D. Lee, S. Krishnamurthy, G. Benoit, Y. Fink and T. Tiwald, "Detailed Study Of Above Bandgap Optical Absorption In MBE HgCdTe", J. Electron. Mater. 34, 773-778 (2005).

[74] D. Chen and J. D. Phillips, "Extraction of Electro-Optic Coefficient in Thin-Film  Linear Electro-Optic Mach-Zehnder Interferometers with Non-Periodic Intensity-Voltage Output Characteristics", Optical Engineering 44, 034601 (2005).

[75] D. Chen, T. E. Murphy and J. D. Phillips, "Properties Of Ferroelectric Pb(Zr,Ti)O3 Thin Films On ZnO/Al2O3 (0001) Epilayers", Thin Solid Films 491, 301-304 (2005).

[76] T. E. Murphy, S. Walavalkar and J. D. Phillips, "Epitaxial growth and surface modeling of ZnO on c-plane Al2O3", Applied Physics Letters 85, 6338-6340 (2004).

[77] T. E. Murphy, D. Chen and J. D. Phillips, "Electronic Properties Of Ferroelectric BaTiO3/MgO Capacitors On GaAs", Applied Physics Letters 85, 3208-3210 (2004).

[78] K. Moazzami, J. Phillips, D. Lee, D. Edwall, M. Carmody, E. Piquette, M. Zandian and J. Arias, "Optical absorption studies of HgCdTe epitaxial layers for improved infrared detector modeling", phys. Stat. Sol. (c) 1, 662-665 (2004).

[79] K. Moazzami, J. Phillips, D. Lee, D. Edwall, M. Carmody, E. Piquette, M. Zandian and J. Arias, "Optical Absorption Model for MBE HgCdTe and Application to Infrared Detector Photo Response", J. Electron. Mater. 33, 701-708 (2004).

[80] D. Chen, T. E. Murphy, S. Chakrabarti and J. D. Phillips, "Optical Waveguiding In BaTiO3/MgO/AlxOy/GaAs Heterostructures", Applied Physics Letters 85, 5206-5208 (2004).

[81] S. Chakrabarti, S. Fathpour, K. Moazzami, J. Phillips, Y. Lei, N. Browning and P. Bhattacharya, "Pulsed Laser Annealing of Self-Organized InAs/GaAs Quantum Dots", Journal of Electronic Materials 33, L5-8 (2004).

[82] J. D. Phillips, K. Moazzami, J. Kim, D. D. Edwall, D. L. Lee and J. M. Arias, "Uniformity of optical absorption in HgCdTe epilayer measured by infrared spectromicroscopy", Applied Physics Letters 83, 3701-3703 (2003).

[83] K. Moazzami, D. Liao, J. D. Phillips, D. L. Lee, M. Carmody, M. Zandian and D. Edwall, "Optical Absorption Properties of HgCdTe Epilayers with Uniform Composition", J. Electron. Mater. 32, 646-650 (2003).

[84] B. Kochman, A. D. Stiff-Roberts, S. Chakrabarti, J. D. Phillips, S. Krishna, J. Singh and P. Bhattacharya, "Absorption, Carrier Lifetime, and Gain in InAs-GaAs Quantum-Dot Infrared Photodetectors", IEEE Journal of Quantum Electronics 39, 459-467 (2003).

[85] M. Carmody, D. Lee, M. Zandian, J. Phillips and J. Arias, "Threading and Misfit-Dislocation Motion in Molecular-Beam-Epitaxy-Grown HgCdTe Epilayers", J. Electron. Mater. 32, 710-716 (2003).

[86] P. S. Wijewarnasuriya, M. Zandian, J. Phillips, D. Edwall, R. E. Dewames, G. Hildebrandt, J. Bajaj, J. Arias, A. I. D'Souza and F. Moore, "Advances in Large-Area Hg1-xCdxTe Photovoltaic Detectors for Remote-Sensing Applications", Journal of Electronic Materials 31, 726-31 (2002).

[87] B. Shin, B. Lita, R. S. Goldman, J. D. Phillips and P. Bhattacharya, "Lateral indium-indium pair correlations within the wetting layers of buried InAs/GaAs quantum dots", Applied Physics Letters 81, 1423-25 (2002).

[88] J. D. Phillips, D. D. Edwall and D. L. Lee, "Control Of Very-Long-Wavelength Infrared HgCdTe Detector Cutoff Wavelength", Journal of Electronic Materials 31, 664-668 (2002).

[89] J. Phillips, "Evaluation of the fundamental properties of quantum dot infrared detectors", Journal of Applied Physics 91, 4590-4594 (2002).

[90] S. Krishna, A. D. Stiff-Roberts, J. D. Phillips, P. Bhattacharya and S. W. Kennerly, "Features - Hot Dot Detectors - Infrared quantum dot intersubband photodetectors are a promising technology for multiwavelength IR detection", IEEE circuits and devices 18, 14 (11 pages) (2002).

[91] K. Kim, J. Urayama, T. Norris, J. Singh, J. Phillips and P. Bhattacharya, "Gain dynamics and ultrafast spectral hole burning in In(Ga)As self-organized quantum dots", Applied Physics Letters 81, 670-2 (2002).

[92] J. Phillips, D. Edwall, D. Lee and J. Arias, "Growth of HgCdTe for long-wavelength infrared detectors using automated control from spectroscopic ellipsometry measurements", J. Vac. Sci. Technol. B 19, 1580-4 (2001).

[93] D. Edwall, J. Phillips, D. Lee and J. Arias, "Composition control of long wavelength MBE HgCdTe using in-situ spectroscopic ellipsometry", Journal of Electronic Materials 30, 643-6 (2001).

[94] P. Bhattacharya, S. Krishna, J. Phillips, P. J. McCann and K. Namjou, "Carrier-dynamics in self-organized quantum dots and their application to long-wavelength sources and detectors", Journal of Crystal Growth 227, 27-35 (2001).

[95] B. Lita, R. S. Goldman, J. D. Phillips and P. K. Bhattacharya, "Interdiffusion, segregation, and dissolution in InAs/GaAs quantum dot superlattices", Surface Review and Letters 7, 539-45 (2000).

[96] R. M. Biefeld, J. D. Phillips and S. R. Kurtz, "InAsSb/InPSb strained-layer superlattice growth using metal-organic chemical vapor deposition", Journal of Crystal Growth 211, 400-4 (2000).

[97] R. M. Biefeld, J. D. Phillips and S. R. Kurtz, "Exploring new active regions for type I InAsSb strained-layer lasers", Journal of Electronic Materials 29, 91-3 (2000).

[98] R. M. Biefeld and J. D. Phillips, "Growth of InSb on GaAs using InAlSb buffer layers", Journal of Crystal Growth 209, 567-71 (2000).

[99] Z. Weidong, O. Qasaimeh, J. Phillips, S. Krishna and P. Bhattacharya, "Bias-controlled wavelength switching in coupled-cavity In0.4Ga0.6As/GaAs self-organized quantum dot lasers", Applied Physics Letters 74, 783-5 (1999).

[100] O. Qasaimeh, W. D. Zhou, J. Phillips, S. Krishna, P. Bhattacharya and M. Dutta, "Bistability and self-pulsation in quantum-dot lasers with intracavity quantum-dot saturable absorbers", Applied Physics Letters 74, 1654-6 (1999).

[101] J. D. Phillips, P. K. Bhattacharya and U. D. Venkateswaran, "Photoluminescence studies on self-organized InAlAs/AlGaAs quantum dots under pressure", Physica Status Solidi B 211, 85-9 (1999).

[102] J. Phillips, K. Kamath, P. Bhattacharya and U. Venkateswaran, "Temperature-dependent photoluminescence of In 0.5Al0.5As/Al0.25Ga0.75As self-organized quantum dots", Journal of Applied Physics 85, 2997-9 (1999).

[103] J. Phillips, P. Bhattacharya and U. Venkateswaran, "Pressure-induced energy level crossings and narrowing of photoluminescence linewidth in self-assembled InAlAs/AlGaAs quantum dots", Applied Physics Letters 74, 1549-51 (1999).

[104] J. Phillips, P. Bhattacharya, S. W. Kennerly, D. W. Beekman and M. Dutta, "Self-assembled InAs-GaAs quantum-dot intersubband detectors", IEEE Journal of Quantum Electronics 35, 936-43 (1999).

[105] B. Lita, R. S. Goldman, J. D. Phillips and P. K. Bhattacharya, "Interdiffusion and surface segregation in stacked self-assembled InAs/GaAs quantum dots", Applied Physics Letters 75, 2797-9 (1999).

[106] B. Lita, R. S. Goldman, J. D. Phillips and P. K. Bhattacharya, "Nanometer-scale studies of vertical organization and evolution of stacked self-assembled InAs/GaAs quantum dots", Applied Physics Letters 74, 2824-6 (1999).

[107] K. K. Linder, J. Phillips, O. Qasaimeh, X. F. Liu, S. Krishna, P. Bhattacharya and J. C. Jiang, "Self-organized In0.4Ga0.6As quantum-dot lasers grown on Si substrates", Applied Physics Letters 74, 1355-7 (1999).

[108] K. K. Linder, J. Phillips, O. Qasaimeh, X. F. Liu, S. Krishna and P. Bhattacharya, "Growth and electroluminescent properties of self-organized In0.4Ga0.6As/GaAs quantum dots grown on silicon", J. Vac. Sci. Technol. B 17, 1116-19 (1999).

[109] K. K. Linder, J. Phillips, O. Qasaimeh, P. Bhattacharya and J. C. Jiang, "In(Ga)As/GaAs self-organized quantum dot light emitters grown on silicon substrates", Journal of Crystal Growth 201, 1186-9 (1999).

[110] D. Klotzkin, J. Phillips, H. Jiang, J. Singh and P. Bhattacharya, "Electron intersubband energy level spacing in self-organized In0.4Ga0.6As/GaAs quantum dot lasers from temperature-dependent modulation measurements", J. Vac. Sci. Technol. B 17, 1276-80 (1999).

[111] P. Bhattacharya, K. K. Kamath, J. Singh, D. Klotzkin, J. Phillips, H. T. Jiang, N. Chervela, T. B. Norris, T. Sosnowski, J. Laskar and M. R. Murty, "In(Ga)As/GaAs self-organized quantum dot lasers: DC and small-signal modulation properties", IEEE Transactions on Electron Devices 46, 871-83 (1999).

[112] P. Bhattacharya, K. Kamath, J. Phillips and D. Klotzkin, "Self-organized growth of In(Ga)As/GaAs quantum dots and their opto-electronic device applications", Bulletin of Materials Science 22, 519-29 (1999).

[113] O. Qasaimeh, K. Kamath, P. Bhattacharya and J. Phillips, "Linear and quadratic electro-optic coefficients of self-organized In0.4Ga0.6As/GaAs quantum dots", Applied Physics Letters 72, 1275-7 (1998).

[114] J. Phillips, K. Kamath, X. Zhou, N. Chervela and P. Bhattacharya, "Intersubband absorption and photoluminescence in Si-doped self-organized InAs/Ga(Al)As quantum dots", J. Vac. Sci. Technol. B 16, 1343-6 (1998).

[115] J. Phillips, K. Kamath, T. Brock and P. Bhattacharya, "Characteristics of InAs/AlGaAs self-organized quantum dot modulation doped field effect transistors", Applied Physics Letters 72, 3509-11 (1998).

[116] J. Phillips, K. Kamath and P. Bhattacharya, "Far-infrared photoconductivity in self-organized InAs quantum dots", Applied Physics Letters 72, 2020-2 (1998).

[117] J. Phillips, K. Kamath, X. Zhou, N. Chervela and P. Bhattacharya, "Photoluminescence and far-infrared absorption in Si-doped self-organized InAs quantum dots", Applied Physics Letters 71, 2079-81 (1997).

[118] K. Kamath, J. Phillips, H. Jiang, J. Singh and P. Bhattacharya, "Small-signal modulation and differential gain of single-mode self-organized In0.4Ga0.6As/GaAs quantum dot lasers", Applied Physics Letters 70, 2952-3 (1997).

[119] K. Kamath, P. Bhattacharya and J. Phillips, "Room temperature luminescence from self-organized InxGa1-xAs/GaAs (0.35<x<0.45) quantum dots with high size uniformity", Journal of Crystal Growth 175, 175-1762 (1997).

[120] J. Phillips, K. Kamath, J. Singh and P. Bhattacharya, "Adatom migration effects during molecular beam epitaxial growth of InGaAs/GaAs quantum wells on patterned substrates with vertical sidewalls: blue shift in luminescence spectra", Applied Physics Letters 68, 1120-2 (1996).

[121] K. Kamath, J. Phillips, J. Singh and P. Bhattacharya, "Large blueshift in the photoluminescence of pseudomorphic InGaAs/GaAs quantum wells grown in patterned (100) GaAs grooves and ridges with vertical sidewalls", J. Vac. Sci. Technol. B 14, 2312-14 (1996).

[122] K. Kamath, P. Bhattacharya, T. Sosnowski, T. Norris and J. Phillips, "Room-temperature operation of In0.4Ga0.6As/GaAs self-organised quantum dot lasers", Electronics Letters 32, 1374-5 (1996).

[123] P. F. Baude, M. A. Haase, G. M. Haugen, K. K. Law, T. J. Miller, K. Smekalin, J. Phillips and P. Bhattacharya, "Conduction band offsets in CdZnSe/ZnSSe single quantum wells measured by deep level transient spectroscopy", Applied Physics Letters 68, 3591-3593 (1996).

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